Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Useful P(o) at 1 GHz\n• Low noise\n• High gain - 13 dB minimum;

METAL GATE RF SILICON FET

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PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 2400 V Mean on-state current 1270 A Surge current 19 kA

Photo Interrupter

Photo Interrupter For contactless SW, object detection Overview CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elem

uP Compatible, Double-Buffered D to A Converters

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uP Compatible, Double-Buffered D to A Converters

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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