位置:CY7C25652KV18-550BZXC > CY7C25652KV18-550BZXC详情

CY7C25652KV18-550BZXC中文资料

厂家型号

CY7C25652KV18-550BZXC

文件大小

496.32Kbytes

页面数量

31

功能描述

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

静态随机存取存储器 72MB(2Mx36) 1.8v 550MHz DDR II 静态随机存取存储器

数据手册

原厂下载下载地址一下载地址二到原厂下载

简称

CYPRESS赛普拉斯

生产厂商

Cypress Semiconductor

中文名称

赛普拉斯半导体公司官网

CY7C25652KV18-550BZXC数据手册规格书PDF详情

Functional Description

The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.

Features

■ Separate independent read and write data ports

❐ Supports concurrent transactions

■ 550 MHz clock for high bandwidth

■ Four-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

❐ Supported for D[x:0], BWS[x:0], and K/K inputs

■ Single multiplexed address input bus latches address inputs for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR® II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]

❐ Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement

CY7C25652KV18-550BZXC产品属性

  • 类型

    描述

  • 型号

    CY7C25652KV18-550BZXC

  • 功能描述

    静态随机存取存储器 72MB(2Mx36) 1.8v 550MHz DDR II 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-10-5 10:11:00
供应商 型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
24+
FBGA165
23000
免费送样原盒原包现货一手渠道联系
Cypress
165-FBGA
6200
Cypress一级分销,原装原盒原包装!
CYPRESS
23+
BGA-165
8560
受权代理!全新原装现货特价热卖!
CYPRESS
25+
BGA-165
36
就找我吧!--邀您体验愉快问购元件!
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
Cypress(赛普拉斯)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
Cypress Semiconductor/赛普拉斯
两年内
NA
115
实单价格可谈
CYPRESS/赛普拉斯
25+
FBGA165
29
原装正品,假一罚十!
CYPRESS/赛普拉斯
24+
TSOP44
6512
公司现货库存,支持实单

CY7C25652KV18-550BZXC 价格

参考价格:¥2039.8052

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