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CZT晶体管资料
CZT2222A别名:CZT2222A三极管、CZT2222A晶体管、CZT2222A晶体三极管
CZT2222A生产厂家:美国中央固体工业公司
CZT2222A制作材料:Si-NPN
CZT2222A性质:射频/高频放大 (HF)_功率放大 (L)
CZT2222A封装形式:贴片封装
CZT2222A极限工作电压:40V
CZT2222A最大电流允许值:
CZT2222A最大工作频率:300MHZ
CZT2222A引脚数:3
CZT2222A最大耗散功率:2W
CZT2222A放大倍数:
CZT2222A图片代号:H-99
CZT2222Avtest:40
CZT2222Ahtest:300000000
- CZT2222Aatest:0
CZT2222Awtest:2
CZT2222A代换 CZT2222A用什么型号代替:CZT3904,
CZT价格
参考价格:¥3.3315
型号:CZT122TR 品牌:CENTRAL SEMICONDUCTOR 备注:这里有CZT多少钱,2025年最近7天走势,今日出价,今日竞价,CZT批发/采购报价,CZT行情走势销售排行榜,CZT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT122,CZT127typesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedinasurfacemountpackagedesignedforlowspeedswitchingandamplifierapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
TRANSISTOR (NPN) TRANSISTOR(NPN) FEATURES ●ComplementarytoCZT127 ●SiliconPowerDarlingtonTransistors ●Lowspeedswitchingandamplifierapplications | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
Surface Mount NPN Silicon Power Darlington Transistor ■Features ●SiliconPowerDarlingtonTransistors ●Lowspeedswitchingandamplifierapplications ●ComplementarytoCZT127 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
Surface Mount PNP Silicon Power Darlington Transistor Features ●Highcurrent(max.5A). ●Lowvoltage(max.100V). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT122,CZT127typesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedinasurfacemountpackagedesignedforlowspeedswitchingandamplifierapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2000isanNPNepitaxialplanarsilicondarlingtontransistormanufacturedinanepoxymoldedsurfacemountpackage,designedforapplicationsrequiringextremelyhighvoltagesandhighgaincapability. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PNP Silicon Extremely High Voltage Darlington Transistor PNPSiliconExtremelyHighVoltageDarlingtonTransistor | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPN SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2222AtypeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeamplifierandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2222AtypeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeamplifierandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT250KtypeisanNPNsiliconDarlingtontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforapplicationsrequiringextremelyhighgain. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2680NPNhighvoltageswitchingpowertransistor,manufacturedbytheepitaxialplanarprocess,combinesbothpowerandhighspeedswitchingcharacteristicsinaSOT-223surfacemountpackage.Typicalapplicationsincludedriversandgeneralhighvoltage | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2907AtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeamplifierandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
2.0W Surface Mount Complementary PNP Silicon Power Transistor Features ●Highcurrent(max.6A). ●Lowvoltage(max.60V). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2955andCZT3055typesaresurfacemountepoxymoldedcomplementarysilicontransistorsmanufacturedbytheepitaxialbaseprocess,designedforsurfacemountedpoweramplifierapplicationsupto6.0amps. MARKINGCODE:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2955andCZT3055typesaresurfacemountepoxymoldedcomplementarysilicontransistorsmanufacturedbytheepitaxialbaseprocess,designedforsurfacemountedpoweramplifierapplicationsupto6.0amps. MARKINGCODE:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3019typeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrentgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2955andCZT3055typesaresurfacemountepoxymoldedcomplementarysilicontransistorsmanufacturedbytheepitaxialbaseprocess,designedforsurfacemountedpoweramplifierapplicationsupto6.0amps. MARKINGCODE:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2955andCZT3055typesaresurfacemountepoxymoldedcomplementarysilicontransistorsmanufacturedbytheepitaxialbaseprocess,designedforsurfacemountedpoweramplifierapplicationsupto6.0amps. MARKINGCODE:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
2.0W Surface Mount Complementary NPN Silicon Power Transistor Features ●Highcurrent(max.6A). ●Lowvoltage(max.60V). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
High Current TRANSISTOR(NPN) FEATURES ●HighCurrent ●LowVoltage ●ComplementtoCZT2955 ●SurfaceMountedPowerAmplifierApplication | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-223 Plastic-Encapsulate Transistors FEATURES HighCurrent LowVoltage ComplementtoCZT2955 SurfaceMountedPowerAmplifierApplication | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-223 Plastic-Encapsulate Transistors FEATURES HighCurrent LowVoltage ComplementtoCZT2955 SurfaceMountedPowerAmplifierApplication | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2955andCZT3055typesaresurfacemountepoxymoldedcomplementarysilicontransistorsmanufacturedbytheepitaxialbaseprocess,designedforsurfacemountedpoweramplifierapplicationsupto6.0amps. MARKINGCODE:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3090LisaLowVCE(SAT)NPNTransistorinaspacesavingPowerSOT-223surfacemountpackage,designedforDC-DCconvertersformobilesystemsandLANcards,motorcontrol,powermanagementandstrobeflashunits. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3090LEisanEnhancedSpecificationlowVCE(SAT)NPNsiliconpowertransistorpackagedinanindustrystandardSOT-223case.HighCollectorCurrent,coupledwithaLowSaturationVoltage,makethisanexcellentchoiceforindustrialandconsumerapplicati | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3120NPNswitchingpowertransistor,manufacturedbytheepitaxialplanarprocess,combinesbothpowerandhighspeedswitchingcharacteristicsinaSOT-223SurfaceMountPackage.Typicalapplicationsincludedrivers,DC-DCconverters,andgeneralfastsw | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT NPN SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3150typeisaNPNSiliconPowerTransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,highgain,fastswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT31CandCZT32Ctypesaresurfacemountepoxymoldedcomplementarysilicontransistorsmanufacturedbytheepitaxialbaseprocess,designedforsurfacemountedpoweramplifierapplicationsupto3.0amps. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SOT-223 Plastic-Encapsulate Transistors FEATURES ComplementarytoCZT32C Poweramplifierapplicationsupto3.0amps. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-223 Plastic-Encapsulate Transistors FEATURES ComplementarytoCZT31C Poweramplifierapplicationsupto3.0amps. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT31CandCZT32Ctypesaresurfacemountepoxymoldedcomplementarysilicontransistorsmanufacturedbytheepitaxialbaseprocess,designedforsurfacemountedpoweramplifierapplicationsupto3.0amps. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3904andCZT3906arecomplementarysilicontransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforsmallsignalgeneralpurposeandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3904andCZT3906arecomplementarysilicontransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforsmallsignalgeneralpurposeandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3904andCZT3906arecomplementarysilicontransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforsmallsignalgeneralpurposeandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3904andCZT3906arecomplementarysilicontransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforsmallsignalgeneralpurposeandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3904andCZT3906arecomplementarysilicontransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforsmallsignalgeneralpurposeandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3904andCZT3906arecomplementarysilicontransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforsmallsignalgeneralpurposeandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT4033typeisanPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrentgeneralpurposeamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5338isanNPNsiliconpowertransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforapplicationsrequiringextremelyhighcurrentamplificationandswitchingcapability. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5401typeisanPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PNP Silicon Transistor PNPSiliconTransistor | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
Epitaxial Planar Transistor Description TheCZT5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SOT-223 Plastic-Encapsulate Transistors FEATURES HighVoltage HighVoltageAmplifierApplication | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TRANSISTOR (PNP) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:-0.6A Collector-basevoltageV(BR)CBO:-160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5401EisaPNPSiliconTransistor,packagedinanSOT-223case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltage. MARKING:FULLPARTNUMBER FEATURES: •HighCollectorBreakdownVoltage250V •LowLeakageCurrent50n | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5551typeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN Silicon Transistor
| KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
Epitaxial Planar Transistor Description TheCZT5551isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SOT-223 Plastic-Encapsulate Transistors FEATURES HighVoltage HighVoltageAmplifierApplication | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
NPN Silicon Epitaxial Planar Transistor Features HighVoltage HighVoltageAmplifierApplication | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | |||
NPN Silicon Medium Power Transistor FEATURES •HighVoltageAmplifierApplication •HighVoltage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5551EisanNPNSiliconTransistor,packagedinanSOT-223case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltage. MARKINGCODE:FULLPARTNUMBER FEATURES: •HighCollectorBreakdownVoltage250V •LowLeakageCurre | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5551HCtypeisahighcurrentNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageandhighcurrentamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT NPN HIGH CURRENT SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT651isaNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrentapplications MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN - High Current Transistor Chip PROCESSCP314V SmallSignalTransistor NPN-HighCurrentTransistorChip | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO DESCRIPTION: TheCENTRALSEMICONDUCTORCZT7090LisaLowVCE(SAT)PNPTransistorinaspacesavingPowerSOT-223surfacemountpackage,designedforDC-DCconvertersformobilesystemsandLANcards,motorcontrol,powermanagementandstrobeflashunits. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Power Transistor PNP - Low Saturation Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize41.3x41.3MILS DieThickness9.0MILS BaseBondingPadArea9.5x9.2MILS EmitterBondingPadArea12.8x10.2MILS TopSideMetalizati | CentralCentral Semiconductor Corp 美国中央半导体 | |||
ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT7090LEisanEnhancedSpecificationLowVCE(SAT)PNPsiliconpowertransistorpackagedinanindustrystandardSOT-223case.Highcollectorcurrent,coupledwithalowsaturationvoltage,makethisanexcellentchoiceforindustrialandconsumerapplicati | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT7120PNPswitchingpowertransistor,manufacturedbytheepitaxialplanarprocess,combinesbothpowerandhighspeedswitchingcharacteristicsinaSOT-223surfacemountpackage.Typicalapplicationsincludedrivers,DC-DCconverters,andgeneralfastsw | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SURFACE MOUNT PNP HIGH CURRENT SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT751isaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrentapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 |
CZT产品属性
- 类型
描述
- 型号
CZT
- 制造商
CUI
- 制造商全称
CUI INC
- 功能描述
incremental encoder
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CENTRAL |
2016+ |
SOT-223 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
CENTRAL |
24+ |
SOT-89 |
499490 |
免费送样原盒原包现货一手渠道联系 |
|||
Central |
1822+ |
SOT-223 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
长电 |
25+23+ |
SOT-223 |
24520 |
绝对原装正品全新进口深圳现货 |
|||
CENTRAL |
22+ |
SOT-223 |
16741 |
原装正品现货,可开13点税 |
|||
长电 |
24+ |
SOT-223 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
Central |
23+ |
SOT-223 |
7300 |
专注配单,只做原装进口现货 |
|||
优势CENTR |
23+ |
SOT223 |
7000 |
||||
CENTRAL |
2447 |
SOT-223 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CENTRAL |
25+ |
SOT-223 |
34069 |
CENTRAL全新特价CZT122即刻询购立享优惠#长期有货 |
CZT规格书下载地址
CZT参数引脚图相关
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- D100
- D10
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- D050A
- D025K
- D025A
- D0100AD
- c波段
- CZTA92
- CZTA64
- CZTA42
- CZTA14
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- CZT5401
- CZT5338
- CZT4033
- CZT3906
- CZT3904
- CZT32C
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- CZT3150
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- CZT305
- CZT3019
- CZT2955
- CZT2907A
- CZT2680
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- CZN-15E
- CZM-SS
- CZMK9V1
- CZMK9.1
- CZMK8V2
- CZMK8.2
- CZMK7V5
- CZMK7.5
- CZMK6V8
- CZMK6V2
- CXTA92
- CXTA64
- CXTA42
- CXTA14
- CXT5551
- CXT5401
- CXT4033
- CXT3906
- CXT3904
- CXT3019
- CXT2907A
- CXT2222A
- CX958
- CX956
- CX954
- CX918
- CX917
- CX908
- CX906
- CX904
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PCF7953射频微控制器-MCU,8051射频微控制器-MCU,64kB射频微控制器-MCU,13.56MHz射频微控制器-MCU,ARMCortexM3射频微控制器-MCU,CYW43012射频微控制器-MCU
2020-11-10CYW20735PB1KML1G射频微控制器原装热卖
CYW20735PB1KML1G射频微控制器品牌:Cypress封装:QFN-60批次:19+包装数量:260全新原装正品,支持订货
2019-6-13
DdatasheetPDF页码索引
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