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位置：首页 > IC中文资料第934页 > CY7C1361A

型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1361A

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-100AC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-100AI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-100AJC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-100AJI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-100BGC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-100BGI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-117AC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-117AI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-117AJC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-117AJI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-117BGC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-117BGI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-133AC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-133AI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-133AJC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-133AJI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-133BGC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-133BGI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-150AC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-150AJC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361A-150BGC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361B

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361C

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

文件：567.48 Kbytes Page：31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1361C

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

文件：1.10773 Mbytes Page：32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1361A产品属性

  • 类型

    描述

  • 型号

    CY7C1361A

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 8ns 100-Pin TQFP

CY7C1361A供应商更多...

更新时间：2024-6-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
CY7C1361A-117AJC
CYPRESS(赛普拉斯)
23+
LQFP100
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市汇莱威科技有限公司
CY7C1361A-100AC
CY
QFP100
68900
原包原标签100%进口原装常备现货!
询价
深圳市恒达亿科技有限公司
CY7C1361A-117AJC
CYPRESS
23+
TQFP
4500
全新原装、诚信经营、公司现货销售!
询价
深圳市一线半导体有限公司
CY7C1361A-100AC
CYPRESS
06/07+
QFP
593
询价
深圳市冠亿通科技有限公司
CY7C1361A-100AJC
Cypress
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
标准国际(香港)有限公司
CY7C1361A-100ACT
CY7C1361A-100ACT
35
35
询价
深圳市凯斯宇科技有限公司
CY7C1361A-117AJC
CypressSemiconductorCorp
2022
ICSRAM9MBIT117MHZ100LQFP
5058
原厂原装正品,价格超越代理
询价
深圳市宏捷佳电子科技有限公司
CY7C1361A-100BGC
CYPRESS
23+
BGA
8230
全新原装真实库存含13点增值税票!
询价
深圳市创新迹电子有限公司
CY7C1361A-100AC
CYPRESS/赛普拉斯
22+
QFP100
20000
原装现货,实单支持
询价
深圳市宏世佳电子科技有限公司
CY7C1361A-100AC
CYPRESS
2023+
TQFP
3695
全新原厂原装产品、公司现货销售
询价

CY7C1361A芯片相关品牌

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