2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

2K x 8 Static RAM

文件：193.23 Kbytes Page：10 Pages

封装/外壳：24-DIP（0.300"，7.62mm） 包装：管件 描述：IC SRAM 16KBIT PARALLEL 24DIP 集成电路（IC） 存储器

2K x 8 Static RAM

文件：193.23 Kbytes Page：10 Pages

2K x 8 Static RAM

文件：193.23 Kbytes Page：10 Pages

2K x 8 Static RAM

文件：193.23 Kbytes Page：10 Pages