CY7C1061价格

参考价格:¥707.8466

型号:CY7C10612DV33-10ZSXI 品牌:Cynergy 3 备注:这里有CY7C1061多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1061批发/采购报价,CY7C1061行情走势销售排行榜,CY7C1061报价。
型号 功能描述 生产厂家 企业 LOGO 操作

16-Mbit (1M x 16) Static RAM

Functional Description The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V ■ 2.

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

Functional Description The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V ■ 2.

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

Functional Description The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 100 MHz ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

Functional Description The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 100 MHz ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

Functional Description The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 100 MHz ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M words 횞 16 bit) Static RAM with Error-Correcting Code (ECC)

Functional Description CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC[1]. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-det

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M words 횞 16 bit) Static RAM with Error-Correcting Code (ECC)

Functional Description CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC[1]. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-det

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M 횞 16) Static RAM

文件:329.98 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M 횞 16) Static RAM

文件:329.98 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M 횞 16) Static RAM

文件:329.98 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:54-TSOP(0.400",10.16mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC SRAM 16MBIT PAR 54TSOP II 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M × 16) Static RAM

Infineon

英飞凌

16-Mbit (1M 횞 16) Static RAM

文件:455.26 Kbytes Page:19 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:54-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 16MBIT PAR 54TSOP II 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Asynchronous SRAM

Infineon

英飞凌

16-Mbit (1M 횞 16) Static RAM

文件:455.26 Kbytes Page:19 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M 횞 16) Static RAM

文件:455.26 Kbytes Page:19 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

异步 SRAM

Infineon

英飞凌

16-Mbit (1M 횞 16) Static RAM

文件:455.26 Kbytes Page:19 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M 횞 16) Static RAM

文件:455.26 Kbytes Page:19 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M 횞 16) Static RAM

文件:455.26 Kbytes Page:19 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M words 횞 16 bit) Static RAM

文件:1.9338 Mbytes Page:21 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M words 횞 16 bit) Static RAM

文件:1.9338 Mbytes Page:21 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M words 횞 16 bit) Static RAM

文件:1.9338 Mbytes Page:21 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M 횞 16) Static RAM

文件:422 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

文件:642.96 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

文件:642.96 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M 횞 16) Static RAM

文件:422 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M 횞 16) Static RAM

文件:558.38 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

文件:642.96 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

文件:642.96 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M 횞 16) Static RAM

文件:422 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M 횞 16) Static RAM

文件:558.38 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1M x 16) Static RAM

文件:642.96 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1061产品属性

  • 类型

    描述

  • 型号

    CY7C1061

  • 功能描述

    静态随机存取存储器 1024Kbx16 16Mb 3.3V

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-10-19 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
24+
NA/
3335
原装现货,当天可交货,原型号开票
CYPRESS/赛普拉斯
24+
SOP
6618
公司现货库存,支持实单
CYPRESS(赛普拉斯)
24+
TSOPII54
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
CYPRESS/赛普拉斯
25+
tsop
50
原装正品,假一罚十!
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
CYP
420
756
公司优势库存 热卖中!
CYPRESS
22+
TSOP
5000
原装现货库存.价格优势!!
CRYESS
25+
DIP16
18000
原厂直接发货进口原装
ADI
23+
TSOP-54
7000
CYPRESS/赛普拉斯
1902+
tsop
2734
代理品牌

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