512K x 24 Static RAM

Functional Description The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-d

512 K 횞 24 Static RAM TTL-compatible inputs and outputs

文件：487.76 Kbytes Page：13 Pages

512K x 24 Static RAM

512K x 24 Static RAM

Functional Description The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-d

512K x 24 Static RAM

Functional Description The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-d

512K x 24 Static RAM

Functional Description The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-d

512K x 24 Static RAM

Functional Description The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-d

512K x 24 Static RAM

Functional Description The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-d

512K x 24 Static RAM

Functional Description The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-d

512K x 24 Static RAM

文件：303.43 Kbytes Page：9 Pages

512 K 횞 24 Static RAM TTL-compatible inputs and outputs

文件：487.76 Kbytes Page：13 Pages

封装/外壳：119-BGA 包装：管件管件 描述：IC SRAM 12MBIT PARALLEL 119PBGA 集成电路（IC） 存储器

Memories for Embedded Systems - Asynchronous SRAM - Async Fast SRAMs -

512 K 횞 24 Static RAM TTL-compatible inputs and outputs

文件：487.76 Kbytes Page：13 Pages

封装/外壳：119-BGA 包装：管件管件 描述：IC SRAM 12MBIT PARALLEL 119PBGA 集成电路（IC） 存储器

Memories for Embedded Systems - Asynchronous SRAM - Async Fast SRAMs -