位置：首页 > IC中文资料第2500页 > CY7C057V-15BBI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY7C057V-15BBI | 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY7C057V-15BBI | 3.3 V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features ■ True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 36 organization (CY7C056V) ■ 32K x 36 organization (CY7C057V) ■ 0.25-micron Complimentary metal oxide semiconductor (CMOS) for optimum speed/power ■ High-speed access: 12/15 ns | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C057V-15BBI | 3.3 V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM 文件：434.5 Kbytes Page：27 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C057V-15BBI | Memories for Embedded Systems - Other Memories - Dual-Port SRAMs - Standard Asynchronous Dual Ports | Infineon 英飞凌 | | |
CY7C057V-15BBI | 3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3 V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features ■ True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 36 organization (CY7C056V) ■ 32K x 36 organization (CY7C057V) ■ 0.25-micron Complimentary metal oxide semiconductor (CMOS) for optimum speed/power ■ High-speed access: 12/15 ns | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY7C057V-15BBI产品属性
- 类型
描述
- 型号
CY7C057V-15BBI
- 功能描述
静态随机存取存储器 3.3V 16Kx36 Aync IND FLEx36 DualPort 静态随机存取存储器
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS |
2138+ |
原厂标准封装 |
8960 |
代理CYPRESS全系列芯片,原装现货 |
|||
Cypress(赛普拉斯) |
2511 |
172-LBGA |
8790 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Cypress Semiconductor Corp |
23+ |
172-FBGA15x15 |
7300 |
专注配单,只做原装进口现货 |
|||
CYPRESS/赛普拉斯 |
23+ |
LFBGA172 |
1500 |
原装正品代理渠道价格优势 |
|||
CYPRESS/赛普拉斯 |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
CYPRESS/赛普拉斯 |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
|||
Cypress |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
CypressSemiconductorCorp |
19+ |
68000 |
原装正品价格优势 |
CY7C057V-15BBI规格书下载地址
CY7C057V-15BBI参数引脚图相关
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CY7C057V-15BBI数据表相关新闻
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TSOP-44 静态随机存取存储器 , 72 Mbit 静态随机存取存储器 , 16 kbit 5.5 V 静态随机存取存储器 , 45 ns 1 Mbit 64 k x 16 静态随机存取存储器 , 1 M x 16 Parallel 静态随机存取存储器 , 512 k x 8 Through Hole 5.5 V 静态随机存取存储器
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热门搜索： BGA-48 SRAM，并行5.5 V 4.5 V SRAM，1 M x 36 2.7 V 1.7 V SRAM，8 Mbit并行SRAM，256 kx 16 SOJ-44 5.5 V 4.5 V SRAM，10 ns 256 kx 16 SOJ-44 5.5 V 4.5静态SRAM
2020-7-29
DdatasheetPDF页码索引
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