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CY7C056V价格
参考价格：￥398.8130
型号：CY7C056V-15AXC 品牌：Cynergy 3 备注：这里有CY7C056V多少钱，2025年最近7天走势，今日出价，今日竞价，CY7C056V批发/采购报价，CY7C056V行情走势销售排行榜，CY7C056V报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY7C056V | 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY7C056V | 3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C056V | 3.3 V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features ■ True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 36 organization (CY7C056V) ■ 32K x 36 organization (CY7C057V) ■ 0.25-micron Complimentary metal oxide semiconductor (CMOS) for optimum speed/power ■ High-speed access: 12/15 ns | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C056V | 3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static RAM | Infineon 英飞凌 | | |
CY7C056V | 3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
3.3 V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features ■ True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 36 organization (CY7C056V) ■ 32K x 36 organization (CY7C057V) ■ 0.25-micron Complimentary metal oxide semiconductor (CMOS) for optimum speed/power ■ High-speed access: 12/15 ns | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC = | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3 V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM 文件：434.5 Kbytes Page：27 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
IC SRAM 576K PARALLEL 144TQFP | Infineon 英飞凌 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：144-LQFP 包装：管件 描述：IC SRAM 576KBIT PARALLEL 144TQFP 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
IC SRAM 576K PARALLEL 144TQFP | Infineon 英飞凌 | | ||
封装/外壳：144-LQFP 包装：托盘 描述：IC SRAM 576KBIT PARALLEL 144TQFP 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3 V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM 文件：434.5 Kbytes Page：27 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static 文件：695.25 Kbytes Page：23 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY7C056V产品属性
- 类型
描述
- 型号
CY7C056V
- 功能描述
IC SRAM 576KBIT 12NS 144LQFP
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
1,000
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
移动 SDRAM
- 存储容量
256M（8Mx32）
- 速度
133MHz
- 接口
并联
- 电源电压
1.7 V ~ 1.95 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
90-VFBGA
- 供应商设备封装
90-VFBGA（8x13）
- 包装
带卷(TR)
- 其它名称
557-1327-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYP |
24+ |
TQFP144 |
64 |
只做原厂渠道 可追溯货源 |
|||
CYPRESS/赛普拉斯 |
2447 |
QFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Cypress Semiconductor Corp |
23+ |
144-TQFP20x20 |
7300 |
专注配单,只做原装进口现货 |
|||
CYP |
23+ |
原厂标准封装 |
7000 |
||||
CYPRESS |
25+ |
DIP-16 |
18000 |
原厂直接发货进口原装 |
|||
CYPRESS/赛普拉斯 |
24+ |
QFP |
5000 |
全新原装现货特价销售,欢迎来电查询 |
|||
CY |
24+ |
QFP |
90000 |
进口原装现货假一罚十价格合理 |
|||
CYPRESS/赛普拉斯 |
24+ |
QFP |
33487 |
郑重承诺只做原装进口现货 |
|||
CYPRESS |
25+ |
QFP |
6500 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
CYPRESS |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
CY7C056V规格书下载地址
CY7C056V参数引脚图相关
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- CY7C0853V-133BBI
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- CY7C0852V-133BBC
- CY7C0852AV-167AXC
- CY7C0852AV-133AXI
- CY7C0852AV-133AXC
- CY7C0851V-167BBC
- CY7C0833V-100BBI
- CY7C0832AV-167AXC
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- CY7C028-15AXI
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- CY7C028
- CY7C027V-25AXC
- CY7C027V-20AXC
- CY7C027V-15AXC
- CY7C027AV-25AXI
- CY7C027-20AXC
- CY7C027
- CY7C026AV-25AXI
- CY7C026AV-25AXC
- CY7C026AV-20AXC
- CY7C026A-20AXC
- CY7C025
- CY7C024
- CY7C019
- CY7C018
- CY7C016
- CY7C009
- CY7C008
- CY7C006
- CY7BP
- CY7B995
- CY7B992
- CY7B991
- CY7B952
- CY7B951
- CY7B933
- CY7B923
CY7C056V数据表相关新闻
CY7C0853V-100BBI
CY7C0853V-100BBI
2023-11-3CY7C1011CV33-12AXI
CY7C1011CV33-12AXI
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CY7C1019CV33-15ZC 进口原装，主营军工级IC
2020-10-13CY7C028-15AXI 32K / 64K X 16/18双端口静态RAM
CY7C028-15AXI 32K / 64K X 16/18双端口静态RAM
2020-9-27CY7C024AV-20AXI
TSOP-44 静态随机存取存储器 , 72 Mbit 静态随机存取存储器 , 16 kbit 5.5 V 静态随机存取存储器 , 45 ns 1 Mbit 64 k x 16 静态随机存取存储器 , 1 M x 16 Parallel 静态随机存取存储器 , 512 k x 8 Through Hole 5.5 V 静态随机存取存储器
2020-9-23CY7C024AV-20AXI
热门搜索： BGA-48 SRAM，并行5.5 V 4.5 V SRAM，1 M x 36 2.7 V 1.7 V SRAM，8 Mbit并行SRAM，256 kx 16 SOJ-44 5.5 V 4.5 V SRAM，10 ns 256 kx 16 SOJ-44 5.5 V 4.5静态SRAM
2020-7-29
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