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CY62148价格

参考价格:¥36.8191

型号:CY62148DV30LL-55SXI 品牌:Cynergy 3 备注:这里有CY62148多少钱,2026年最近7天走势,今日出价,今日竞价,CY62148批发/采购报价,CY62148行情走势销售排行榜,CY62148报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY62148

512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY62148

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY62148

512K x 8 Static RAM

• 4.5V−5.5V operation\n• CMOS for optimum speed/power\n• Low active power\n   — 660 mW (max.)\n• Low standby power (L version)\n   — 2.75 mW (max.)\n• Automatic power-down when deselected\n• TTL-compatible inputs and outputs\n• Easy memory expansion with CE and OE options;

INFINEON

英飞凌

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

Functional Description The CY62148BN is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduce

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

Functional Description The CY62148BN is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduce

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

Functional Description The CY62148BN is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduce

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

Functional Description The CY62148BN is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduce

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 Mbit (512K x 8) Static RAM

Functional Description The CY62148VN is a high performance CMOS static RAM organized as 512K words by eight bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular tele

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 Mbit (512K x 8) Static RAM

Functional Description The CY62148VN is a high performance CMOS static RAM organized as 512K words by eight bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular tele

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 Mbit (512K x 8) Static RAM

Functional Description The CY62148VN is a high performance CMOS static RAM organized as 512K words by eight bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular tele

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:189.09 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:338.42 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:338.42 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:338.42 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:189.09 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:189.09 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:338.42 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:32-SOIC(0.455",11.30mm 宽) 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 32SOIC 集成电路(IC) 存储器

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:343.63 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:189.09 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:338.42 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:189.09 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:338.42 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:32-SOIC(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 4MBIT PARALLEL 32TSOP II 集成电路(IC) 存储器

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:338.42 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:189.09 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:338.42 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:189.09 Kbytes Page:11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:499.78 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:499.78 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:499.78 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:499.78 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

文件:334.7 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

文件:272.09 Kbytes Page:13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

文件:272.09 Kbytes Page:13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

文件:272.09 Kbytes Page:13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY62148产品属性

  • 类型

    描述

  • Density (Kb):

    4096

  • Frequency (MHz):

    N/A

  • Max. Operating Temp. (°C):

    85

  • Max. Operating VCCQ (V):

    3.60

  • Max. Operating Voltage (V):

    3.60

  • Min. Operating Temp. (°C):

    -40

  • Min. Operating VCCQ (V):

    2.20

  • Min. Operating Voltage (V):

    2.20

  • Organization (X x Y):

    512K x 8

  • Speed (ns):

    55

  • Tape & Reel:

    N

  • Temp. Classification:

    Industrial

更新时间:2026-8-2 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
24+
TSOP32
6800
只做自己库存,全新原装进口正品假一赔百,可开13个点增票
CYPRESS
25+
BGA
4800
原装正品
CYPRESS/赛普拉斯
2025+
758
原装进口价格优 请找坤融电子!
Cypress Semiconductor Corp
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
CYPRESS(赛普拉斯)
25+
SOIC-32
14093
正规渠道,大量现货,只等你来。
CYPRESS
25+
TSOP32
10000
只做原装 有挂有货 假一赔十
CYPRESS/赛普拉斯
26+
SOP32
76200
全新原装进口现货,,本公司承诺原装正品假一赔百
CYPRESS/赛普拉斯
最新
原装
12580
全新原装公司现货假一罚十低价
CYPRESS/赛普拉斯
26+
TSOPI-32
18000
原装正品,可配单,支持实单
CYPRESS/赛普拉斯
25+
SOP32
12496
CYPRESS/赛普拉斯原装正品CY62148EV30LL-55SXI即刻询购立享优惠#长期有货

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