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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15V104QN-50SXI | 4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 |   | |
CY15V104QN-50SXI | 封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：托盘 描述：IC FRAM 4MBIT SPI 50MHZ 8SOIC 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY15V104QN-50SXI | 4Mb 1.8V Industrial 50MHz SPI EXCELON™ F-RAM in 8-pin SOIC | Infineon 英飞凌 | | |
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
25+ |
原封装 |
81220 |
郑重承诺只做原装进口货 |
|||
CYPRESS SEMICONDUCTOR/赛普拉斯 |
两年内 |
N/A |
1393 |
原装现货,实单价格可谈 |
|||
CYPRESS(赛普拉斯) |
24+ |
SOP8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
INFINEON |
23+ |
K-W |
2350 |
只有原装,请来电咨询 |
|||
Infineon |
24+ |
SOIC-8 |
5000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
INFINEON/英飞凌 |
23+ |
PG-DSO-8 |
28611 |
为终端用户提供优质元器件 |
|||
Cypress Semiconductor Corp |
25+ |
8-SOIC(0.209 5.30mm 宽) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
SPANSION(飞索) |
2447 |
SOIC-8 |
315000 |
188个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
Cypress(赛普拉斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
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DdatasheetPDF页码索引
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