16Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 2048K × 8, 20MHz, inrush current control, commercial

Features • 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanced h

16Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 2048K × 8, 20MHz, inrush current control, commercial

Features • 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanced h

封装/外壳：24-TBGA 包装：管件 描述：16MB EXCELON LP FERROELECTRIC RA 集成电路（IC） 存储器

F-RAM（铁电RAM）

F-RAM（铁电RAM）

16Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 2048K × 8, 40MHz, industrial

Features • 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced

16-Mb EXCELON??Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 2048K 횞 8, industrial

Features • 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K x 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 88) - Infineon no delay technology writes - Advanced high