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CY14B104L价格
参考价格：￥209.0283
型号：CY14B104LA-BA25XI 品牌：CYPRESS 备注：这里有CY14B104L多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B104L批发/采购报价，CY14B104L行情走势销售排行榜，CY14B104L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY14B104L | 4-Mbit (512K x 8/256K x 16) nvSRAM 文件：415.19 Kbytes Page：21 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY14B104L | 4-Mbit (512K x 8/256K x 16) nvSRAM 文件：664.19 Kbytes Page：22 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512K x 8/256K x 16) nvSRAM 文件：664.19 Kbytes Page：22 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM 文件：797.79 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvsRAM（非易失性 SRAM） | Infineon 英飞凌 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvSRAM (non-volatile SRAM) | Infineon 英飞凌 | | ||
封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvsRAM（非易失性 SRAM） | Infineon 英飞凌 | |
CY14B104L产品属性
- 类型
描述
- 型号
CY14B104L
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
4-Mbit(512K x 8/256K x 16) nvSRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS(赛普拉斯) |
24+ |
TSOPII-44 |
5768 |
百分百原装正品,可原型号开票 |
|||
Cypress |
24+ |
TSOP |
6800 |
只做自己库存,全新原装进口正品假一赔百,可开13个点增票 |
|||
CYPRESS/赛普拉斯 |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
CYPRESS/赛普拉斯 |
24+ |
BGA |
40000 |
全新原装现货特价销售,欢迎来电查询 |
|||
CYPRESS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Cypress Semiconductor Corp |
25+ |
48-TFBGA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
CYPRESS/赛普拉斯 |
25+ |
TSOP |
15000 |
原装现货假一赔十 |
|||
CYPRESS |
25+ |
28 |
全新原装!优势库存热卖中! |
||||
Cypress |
23+ |
48-FBGA(6x10) |
5700 |
专业分销产品!原装正品!价格优势! |
|||
CYPRESS/赛普拉斯 |
QQ咨询 |
BGA |
902 |
全新原装 研究所指定供货商 |
CY14B104L芯片相关品牌
CY14B104L规格书下载地址
CY14B104L参数引脚图相关
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CY15B102Q-SXM百分百原装，等你来
2024-8-27CXB3590-0000-000N0YAD32Q
產品: White CoB LEDs 安裝風格: SMD/SMT 封裝/外殼: COB - Chip-on-Board 照明色彩: Warm White 波長/色溫: 3200 K 發光強度: - 光通量/輻射通量: 9000 lm 顯色指數 - CRI: 93 視角: 115 deg If - 順向電流: 2.4 A Vf - 順向電壓: 36 V 額定功率: - 長度: 34.85 mm 寬度: 34.85 mm 高度: 1.7
2020-12-21CY15B108QN-40LPXI
CY15B108QN-40LPXI
2020-11-30CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
2020-4-1CXD2163BR
CXD2163BR，全新原装当天发货或门市自取0755-82732291.
2019-12-31CY14B108N-BA25XI进口原装，主营军工级IC
CY14B108N-BA25XI XILINX(赛灵思) ，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-10-18
DdatasheetPDF页码索引
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