CY14B104LA中文资料下载现货供应价格赛普拉斯-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

CY14B104LA价格

参考价格：￥209.0283

型号：CY14B104LA-BA25XI 品牌：CYPRESS 备注：这里有CY14B104LA多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B104LA批发/采购报价，CY14B104LA行情走势销售排行榜，CY14B104LA报价。

型号	功能描述	生产厂家企业	LOGO
CY14B104LA	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA_11	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA_1106	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA_12	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	封装/外壳：48-TFBGA 包装：卷带（TR）描述：IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B104LA-BA45XI	nvSRAM (non-volatile SRAM)	Infineon 英飞凌	Infineon
CY14B104LA-BA45XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	封装/外壳：48-TFBGA 包装：卷带（TR）描述：IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B104LA-ZS20XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY14B104LA产品属性

类型
描述
型号
CY14B104LA
制造商
CYPRESS
制造商全称
Cypress Semiconductor
功能描述
4 Mbit(512K x 8/256K x 16) nvSRAM

CY14B104LA供应商更多...

更新时间：2025-12-29 19:18:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	CY14B104LA-13A45XI	cypress	0749+	N/A	894	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市河锋鑫科技有限公司	CY14B104LABA25XI	Cypress	22+	48FBGA (6x10)	9000	原厂渠道,现货配单	询价
讯运(深圳/上海)电子有限公司	CY14B104LA-BA25XI	SPANSION(飞索)	2021+	FBGA-48(6x10)	499		询价
深圳市富达微科技有限公司	CY14B104LA-ZS45XI	Infineon	24+	44-TSOP	30000	原厂原装，价格优势，欢迎洽谈！	询价
深圳市正迈科技有限公司	CY14B104LA-BA25XI	CYPRESS	23+	NA	3689	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
深圳市美思瑞电子科技有限公司	CY14B104LA-BA25XI	CYPRESS/赛普拉斯	22+	BGA	12245	现货,原厂原装假一罚十!	询价
深圳市赛特兴科技有限公司	CY14B104LA-BA25XI	CYPRESS/赛普拉斯	QQ咨询	BGA	902	全新原装研究所指定供货商	询价
深圳市毅创腾电子科技有限公司	CY14B104LA-BA25XI	Cypress	23+	48-FBGA(6x10)	5700	专业分销产品!原装正品!价格优势!	询价
深圳市拓亿芯电子有限公司	CY14B104LA-ZS25XI	CYPRESS/赛普拉斯	25+	TSOP	15000	原装现货假一赔十	询价
深圳市中飞凌科技有限公司	CY14B104LA-ZS45XI	Infineon	26+	44-TSOP	60000	只有原装,可BOM表配单	询价

CY14B104LA芯片相关品牌

CY14B104LA规格书下载地址

CY14B104LA参数引脚图相关

CY14B104LA数据表相关新闻

CY15B102Q-SXM百分百原装，等你来
CY15B102Q-SXM百分百原装，等你来
2024-8-27
CXB3590-0000-000N0YAD32Q
產品: White CoB LEDs 安裝風格: SMD/SMT 封裝/外殼: COB - Chip-on-Board 照明色彩: Warm White 波長/色溫: 3200 K 發光強度: - 光通量/輻射通量: 9000 lm 顯色指數 - CRI: 93 視角: 115 deg If - 順向電流: 2.4 A Vf - 順向電壓: 36 V 額定功率: - 長度: 34.85 mm 寬度: 34.85 mm 高度: 1.7
2020-12-21
CY15B108QN-40LPXI
CY15B108QN-40LPXI
2020-11-30
CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
2020-4-1
CXD2163BR
CXD2163BR，全新原装当天发货或门市自取0755-82732291.
2019-12-31
CY14B108N-BA25XI进口原装，主营军工级IC
CY14B108N-BA25XI XILINX(赛灵思) ，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-10-18

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

CY14B104LA价格

CY14B104LA产品属性

CY14B104LA供应商更多...

CY14B104LA芯片相关品牌

CY14B104LA规格书下载地址

CY14B104LA参数引脚图相关

CY14B104LA数据表相关新闻

CY15B102Q-SXM百分百原装，等你来

CXB3590-0000-000N0YAD32Q

CY15B108QN-40LPXI

CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J

CXD2163BR

CY14B108N-BA25XI进口原装，主营军工级IC

DdatasheetPDF页码索引