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CY14B104LA价格

参考价格：￥209.0283

型号：CY14B104LA-BA25XI 品牌：CYPRESS 备注：这里有CY14B104LA多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B104LA批发/采购报价，CY14B104LA行情走势销售排行榜，CY14B104LA报价。

型号	功能描述	生产厂家企业	LOGO
CY14B104LA	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA_11	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA_1106	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA_12	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	封装/外壳：48-TFBGA 包装：卷带（TR）描述：IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA25XIT	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B104LA-BA45XI	nvSRAM (non-volatile SRAM)	Infineon 英飞凌	Infineon
CY14B104LA-BA45XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XI	封装/外壳：48-TFBGA 包装：卷带（TR）描述：IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-BA45XIT	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B104LA-ZS20XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104LA-ZS20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY14B104LA产品属性

类型
描述
型号
CY14B104LA
制造商
CYPRESS
制造商全称
Cypress Semiconductor
功能描述
4 Mbit(512K x 8/256K x 16) nvSRAM

CY14B104LA供应商更多...

更新时间：2025-10-23 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	CY14B104LA-ZS45XI	CYPRESS/赛普拉斯	25+	TSSOP	24	原装正品,假一罚十!	询价
深圳市威雅利发展有限公司	CY14B104LA-ZS45XIT	CY	19+	TSOP	5000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
讯运(深圳/上海)电子有限公司	CY14B104LA-ZS45XIT	CYPRESS(赛普拉斯)	2021+	TSOP-44	549		询价
深圳市富达微科技有限公司	CY14B104LA-ZS45XI	Infineon	24+	44-TSOP	30000	原厂原装，价格优势，欢迎洽谈！	询价
深圳市云美电子科技有限公司	CY14B104LA-BA45XI	CYPRESS/赛普拉斯	24+	FBGA-48	39900	只做原装进口现货	询价
深圳市星宇佳科技有限公司	CY14B104LA-BA45XI	CYPRESS/赛普拉斯	20+	FBGA-48	2990		询价
深圳市正迈科技有限公司	CY14B104LA-ZS45XI	CYPRESS	23+	NA	3689	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
深圳市斌腾达科技有限公司	CY14B104LA-BA25XI	Cypress Semiconductor Corp	21+	96-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市富芯乐电子科技有限公司	CY14B104LA-BA45XI	CYPRESS/赛普拉斯	24+	BGA	40000	全新原装现货特价销售,欢迎来电查询	询价
深圳诚思涵科技有限公司	CY14B104LA-ZS45XI	VISHAY/威世	24+	N/A	8000	公司现货库存,支持实单	询价

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CY14B104LA规格书下载地址

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CY15B102Q-SXM百分百原装，等你来
CY15B102Q-SXM百分百原装，等你来
2024-8-27
CXB3590-0000-000N0YAD32Q
產品: White CoB LEDs 安裝風格: SMD/SMT 封裝/外殼: COB - Chip-on-Board 照明色彩: Warm White 波長/色溫: 3200 K 發光強度: - 光通量/輻射通量: 9000 lm 顯色指數 - CRI: 93 視角: 115 deg If - 順向電流: 2.4 A Vf - 順向電壓: 36 V 額定功率: - 長度: 34.85 mm 寬度: 34.85 mm 高度: 1.7
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CY15B108QN-40LPXI
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CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
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CY14B108N-BA25XI进口原装，主营军工级IC
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CY14B104LA规格书下载地址

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CY15B102Q-SXM百分百原装，等你来

CXB3590-0000-000N0YAD32Q

CY15B108QN-40LPXI

CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J

CXD2163BR

CY14B108N-BA25XI进口原装，主营军工级IC

DdatasheetPDF页码索引