CY14B104LA价格
参考价格：￥209.0283
型号：CY14B104LA-BA25XI 品牌：CYPRESS 备注：这里有CY14B104LA多少钱，2026年最近7天走势，今日出价，今日竞价，CY14B104LA批发/采购报价，CY14B104LA行情走势销售排行榜，CY14B104LA报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY14B104LA | 4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY14B104LA | 4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvsRAM（非易失性 SRAM） | INFINEON 英飞凌 | | ||
nvSRAM (non-volatile SRAM) | INFINEON 英飞凌 | | ||
封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvsRAM（非易失性 SRAM） | INFINEON 英飞凌 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY14B104LA产品属性
- 类型
描述
- 密度 (Kb)：
4096
- 频率 (MHz)：
无
- 接口：
Parallel
- 最高工作温度 (°C)：
85
- Max. Operating VCCQ (V)：
3.60
- 最高工作电压 (V)：
3.60
- 最低工作温度 (°C)：
-40
- Min. Operating VCCQ (V)：
2.70
- 最低工作电压 (V)：
2.70
- 组织 (X x Y)：
512Kb x 8
- Part Family：
并行 nvSRAM
- 速率 (ns)：
25
- Tape & Reel：
否
- 温度分类：
工业
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Cypress |
24+ |
TSOP |
6800 |
只做自己库存,全新原装进口正品假一赔百,可开13个点增票 |
|||
BOSCH |
16+ |
QFP32 |
1055 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CY |
26+ |
DIP-16 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
CY |
23+ |
PLCC |
8560 |
受权代理!全新原装现货特价热卖! |
|||
CYPRESS |
22+ |
SOP24L |
8000 |
原装正品支持实单 |
|||
24+ |
QFOP |
195 |
|||||
Cypress Semiconductor Corp |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
CYPRESS(赛普拉斯) |
25+ |
TSOPII-44 |
14093 |
正规渠道,大量现货,只等你来。 |
|||
CYPRESS |
24+ |
DIP |
5000 |
全新原装正品,现货销售 |
|||
CYPRESS |
20+ |
CQFP |
500 |
样品可出,优势库存欢迎实单 |
CY14B104LA规格书下载地址
CY14B104LA参数引脚图相关
- DC-AC
- d880
- d870
- d828
- d7805
- d7804
- d641
- d609
- d415
- d408
- d403
- d402
- d325
- d2007
- d2004
- d2002
- d126
- d1004
- d1002
- c波段
- CY2077
- CY2071A
- CY2040
- CY2037
- CY1AM
- CY19BS
- CY19BPS
- CY19BP
- CY19B
- CY19AS
- CY19A
- CY16BS
- CY16BPS
- CY16BP
- CY16B
- CY15AS
- CY15A
- CY14BS
- CY14BPS
- CY14BP
- CY14B108N-ZSP45XI
- CY14B108N-ZSP25XI
- CY14B108N-BA25XI
- CY14B108M-ZSP45XI
- CY14B108L-ZS45XI
- CY14B108L-ZS25XI
- CY14B108L-BA25XI
- CY14B108K-ZS45XI
- CY14B108K-ZS25XI
- CY14B104NA-ZSP45XI
- CY14B104NA-ZSP25XI
- CY14B104NA-ZS45XI
- CY14B104NA-ZS25XI
- CY14B104NA-ZS20XI
- CY14B104NA-BA45XI
- CY14B104NA-BA25XI
- CY14B104M-ZSP45XI
- CY14B104LA-ZS45XI
- CY14B104LA-ZS25XI
- CY14B104LA-BA25XI
- CY14B104K-ZS45XI
- CY14B104K-ZS25XI
- CY14B101Q2-LHXI
- CY14B101Q2A-SXI
- CY14B101Q1A-SXI
- CY14B101P-SFXI
- CY14B101PA-SFXIT
- CY14B101PA-SFXI
- CY14B101NA-ZS45XI
- CY14B101NA-ZS25XI
- CY14B101LA-ZS45XI
- CY14B101LA-ZS25XI
- CY14B101LA-ZS20XI
- CY14B101LA-SZ45XI
- CY14B101LA-SZ25XI
- CY14B101LA-SP45XI
- CY14B101LA-SP25XIT
- CY14B101LA-SP25XI
- CY14B101LA-BA45XI
- CY14B101KA-ZS45XI
- CY14B
- CY14AS
- CY14APS
- CY14AP
- CY14ACS
- CY14AC
- CY14A
- CY132
- CY12BS
- CY12BPS
- CY12BP
- CY12B
- CY12AS
- CY12A
- CY123
- CY-122B
- CY-122A
- CY-121B
- CY-121A
- CY11BS
CY14B104LA数据表相关新闻
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CXDB5CCBM-EA-A 是长鑫存储（CXMT）推出的车规级 DDR5 内存芯片，采用 BGA200 封装，搭载 4GB 容量、4266Mbps 速率，-40℃~105℃宽温稳定运行，符合汽车电子可靠性标准，国产自研、供货稳定，广泛适配车载、工业控制、高端 IoT 场景，助力国产存储自主可控。
2026-5-28CY15B102Q-SXM百分百原装，等你来
CY15B102Q-SXM百分百原装，等你来
2024-8-27CY15B108QN-40LPXI
CY15B108QN-40LPXI
2020-11-30CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
2020-4-1CXD2163BR
CXD2163BR，全新原装当天发货或门市自取0755-82732291.
2019-12-31CY14B108N-BA25XI进口原装，主营军工级IC
CY14B108N-BA25XI XILINX(赛灵思) ，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-10-18
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