CY14B101NA价格

参考价格:¥106.8190

型号:CY14B101NA-ZS25XI 品牌:Cynergy 3 备注:这里有CY14B101NA多少钱,2025年最近7天走势,今日出价,今日竞价,CY14B101NA批发/采购报价,CY14B101NA行情走势销售排行榜,CY14B101NA报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY14B101NA

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY14B101NA

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY14B101NA

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:1.01329 Mbytes Page:26 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:725.17 Kbytes Page:29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:725.17 Kbytes Page:29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC NVSRAM 1MBIT PAR 44TSOP II 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

nvsRAM(非易失性 SRAM)

Infineon

英飞凌

nvSRAM (non-volatile SRAM)

Infineon

英飞凌

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC NVSRAM 1MBIT PAR 44TSOP II 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:725.17 Kbytes Page:29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:725.17 Kbytes Page:29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

nvsRAM(非易失性 SRAM)

Infineon

英飞凌

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial (I2C) nvSRAM with Real Time Clock

Overview The Cypress CY14C101I/CY14B101I/CY14E101I combines a 1-Mbit nvSRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial I2C interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial (I2C) nvSRAM with Real Time Clock

Overview The Cypress CY14C101I/CY14B101I/CY14E101I combines a 1-Mbit nvSRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial I2C interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K x 8) Serial (I2C) nvSRAM with Real Time Clock

文件:1.27686 Mbytes Page:42 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8) Serial (I2C) nvSRAM with Real Time Clock

文件:1.25734 Mbytes Page:41 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K x 8) Serial (I2C) nvSRAM with Real Time Clock

文件:1.27686 Mbytes Page:42 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY14B101NA产品属性

  • 类型

    描述

  • 型号

    CY14B101NA

  • 制造商

    CYPRESS

  • 制造商全称

    Cypress Semiconductor

  • 功能描述

    1 Mbit(128K x 8/64K x 16) nvSRAM

更新时间:2025-12-29 17:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Cypress(赛普拉斯)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
CYPRESS/赛普拉斯
24+
TSOP44
42000
只做原装进口现货
Cypress(赛普拉斯)
23+
标准封装
6000
正规渠道,只有原装!
Cypress
23+
44-TSOPII
73390
专业分销产品!原装正品!价格优势!
CYPRESS/赛普拉斯
12+
TSOP44
880000
明嘉莱只做原装正品现货
CYPRESS
25+
TSOP-44
3
百分百原装正品 真实公司现货库存 本公司只做原装 可
Infineon
26+
44-TSOP
60000
只有原装,可BOM表配单
CYPRESS(赛普拉斯)
24+
TSOPII-44
16508
原装正品现货支持实单
CYPRESS/赛普拉斯
2450+
TSOP44
8850
只做原装正品假一赔十为客户做到零风险!!
Cypress(赛普拉斯)
21+
TSOP-44
30000
只做原装,质量保证

CY14B101NA芯片相关品牌

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