CY14B101NA价格

参考价格:¥106.8190

型号:CY14B101NA-ZS25XI 品牌:Cynergy 3 备注:这里有CY14B101NA多少钱,2025年最近7天走势,今日出价,今日竞价,CY14B101NA批发/采购报价,CY14B101NA行情走势销售排行榜,CY14B101NA报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY14B101NA

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY14B101NA

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY14B101NA

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:1.01329 Mbytes Page:26 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:725.17 Kbytes Page:29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:725.17 Kbytes Page:29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

nvSRAM (non-volatile SRAM)

Infineon

英飞凌

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC NVSRAM 1MBIT PAR 44TSOP II 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC NVSRAM 1MBIT PAR 44TSOP II 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

nvSRAM (non-volatile SRAM)

Infineon

英飞凌

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:725.17 Kbytes Page:29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM

文件:725.17 Kbytes Page:29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

nvsRAM(非易失性 SRAM)

Infineon

英飞凌

1 Mbit (128K x 8/64K x 16) nvSRAM

文件:1.05739 Mbytes Page:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial (I2C) nvSRAM with Real Time Clock

Overview The Cypress CY14C101I/CY14B101I/CY14E101I combines a 1-Mbit nvSRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial I2C interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial (I2C) nvSRAM with Real Time Clock

Overview The Cypress CY14C101I/CY14B101I/CY14E101I combines a 1-Mbit nvSRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial I2C interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K x 8) Serial (I2C) nvSRAM with Real Time Clock

文件:1.27686 Mbytes Page:42 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K 횞 8) Serial (I2C) nvSRAM with Real Time Clock

文件:1.25734 Mbytes Page:41 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K x 8) Serial (I2C) nvSRAM with Real Time Clock

文件:1.27686 Mbytes Page:42 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY14B101NA产品属性

  • 类型

    描述

  • 型号

    CY14B101NA

  • 制造商

    CYPRESS

  • 制造商全称

    Cypress Semiconductor

  • 功能描述

    1 Mbit(128K x 8/64K x 16) nvSRAM

更新时间:2025-10-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS(赛普拉斯)
24+
TSOPII-44
5768
百分百原装正品,可原型号开票
Cypress
24+
TSSOP
6800
只做自己库存,全新原装进口正品假一赔百,可开13个点增票
CYPRESS/赛普拉斯
25+
TSSOP
10
原装正品,假一罚十!
CYPRESS/赛普拉斯
24+
NA
7000
原装现货,专业配单专家
CYPRESS
原厂封装
9800
原装进口公司现货假一赔百
CYPRESS
23+
NA
3689
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
Infineon
24+
44-TSOP
30000
原厂原装,价格优势,欢迎洽谈!
CYPRESS/赛普拉斯
2022+
6600
只做原装,假一罚十,长期供货。
CYPRESS/赛普拉斯
12+
TSOP44
880000
明嘉莱只做原装正品现货
CYPRESS
21+
TSOP-44
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

CY14B101NA数据表相关新闻