SURFACE MOUNT PNP SILICON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING: FULL PART NUMBER

Surface mount Transistor-Small Signal (<=1A) PNP High Current

封装/外壳：TO-243AA 包装：散装 描述：TRANS PNP 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SURFACE MOUNT PNP SILICON TRANSISTOR

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SURFACE MOUNT PNP SILICON TRANSISTOR

文件：289.66 Kbytes Page：2 Pages

7-SEGMENT DISPLAY OUTPUTS DECADE COUNTERS/DIVIDERS WITH DECODED

DESCRIPTION The HCC4026B/4033B (extended temperature range) and HCF4026B/4033B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4026B and HCC/HCF4033B each consist of a 5-stage

7-SEGMENT DISPLAY OUTPUTS DECADE COUNTERS/DIVIDERS WITH DECODED

DESCRIPTION The HCC4026B/4033B (extended temperature range) and HCF4026B/4033B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4026B and HCC/HCF4033B each consist of a 5-stage

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res