型号 功能描述 生产厂家 企业 LOGO 操作
CXK591000M

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

SonySony Corporation

索尼

CXK591000M

131/072-word X 9-bit High Speed CMOS Static RAM

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

SonySony Corporation

索尼

131,072-word ×9-bit High Speed CMOS Static RAM

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

SonySony Corporation

索尼

CXK591000M产品属性

  • 类型

    描述

  • 型号

    CXK591000M

  • 制造商

    SONY

  • 制造商全称

    Sony Corporation

  • 功能描述

    131,072-word X 9-bit High Speed CMOS Static RAM

更新时间:2025-9-23 17:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SONY
25+
标准封装
18000
原厂直接发货进口原装
SONY
21+
SOP32
1870
原装现货假一赔十
SONY
25+23+
New
30871
绝对原装正品现货,全新深圳原装进口现货
SONY
24+
SOP
2200
SONY
23+
DIP-32
5000
原装正品,假一罚十
SONY
25+
SOJ32
961
原装正品,假一罚十!
SONY
2023+
SOP
50000
原装现货
SONY
24+/25+
37
原装正品现货库存价优
SONY/索尼
96+
SOJ
328
原装现货
SONY
0518+
SOP32
1623
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