65536-word X 8-bit High Speed CMOS Static RAM

Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable

65536-word X 8-bit High Speed CMOS Static RAM

Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable

65536-word X 8-bit High Speed CMOS Static RAM

Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable

65536-word X 8-bit High Speed CMOS Static RAM

Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable

65536-word X 8-bit High Speed CMOS Static RAM

65536-word X 8-bit High Speed CMOS Static RAM

Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：420.76 Kbytes Page：43 Pages