位置：首页 > IC中文资料第12896页 > CXK581000
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 |  |   | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHighSpeedCMOSStaticRAM Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | | |
131072-wordx8-bitHIGHSPEEDCOMSSTATICRAM Description CXK581000P/MisageneralpurposehighspeedCMOSstaticRAMorganizedas131,072wordsby8bits.Operatingonasingle5Vsupply,thisasynchronousICissuitableforhighspeedandlowpowerconsumptionapplicationswherebatterybackupfornonvolatilityisrequired | SonySONY 索尼 | | |
CXK581000产品属性
- 类型
描述
- 型号
CXK581000
- 制造商
SONY
- 制造商全称
Sony Corporation
- 功能描述
131072-word x 8-bit High Speed CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SONY |
2016+ |
SOP32 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SONY |
2339+ |
SOP32 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SONY |
2016+ |
SOP |
6528 |
只做进口原装现货!或订货,假一赔十! |
|||
SONY |
2233+ |
SOP32 |
10400 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
SONY/索尼 |
23+ |
NA/ |
246 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SONY |
2022 |
SOP-32 |
5280 |
原厂原装正品,价格超越代理 |
|||
SONY |
SOP |
320 |
正品原装--自家现货-实单可谈 |
||||
SONY/索尼 |
22+ |
SOP-32 |
12245 |
现货,原厂原装假一罚十! |
|||
MOT |
22+ |
SOP |
3600 |
绝对原装!现货热卖! |
|||
SONY |
2020+ |
SOP |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
CXK581000芯片相关品牌
CXK581000规格书下载地址
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CXK581000数据表相关新闻
CX28229-13P
CX28229-13P
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產品:WhiteCoBLEDs 安裝風格:SMD/SMT 封裝/外殼:COB-Chip-on-Board 照明色彩:WarmWhite 波長/色溫:3200K 發光強度:- 光通量/輻射通量:9000lm 顯色指數-CRI:93 視角:115deg If-順向電流:2.4A Vf-順向電壓:36V 額定功率:- 長度:34.85mm 寬度:34.85mm 高度:1.7
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2019-10-18
DdatasheetPDF页码索引
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