型号 功能描述 生产厂家 企业 LOGO 操作

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word × 8-bit High Speed CMOS Static RAM

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

SonySony Corporation

索尼

CXK581000产品属性

  • 类型

    描述

  • 型号

    CXK581000

  • 制造商

    SONY

  • 制造商全称

    Sony Corporation

  • 功能描述

    131072-word x 8-bit High Speed CMOS Static RAM

更新时间:2025-10-22 20:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SONY
05+
SOP32
140
全新原装进口自己库存优势
SONY/索尼
24+
NA/
246
优势代理渠道,原装正品,可全系列订货开增值税票
SONY
25+
SOP
60
原装正品,假一罚十!
SONY
1824+
SOP
4950
原装现货专业代理,可以代拷程序
SONY
17+
SOP32
9988
只做原装进口,自己库存
SONY/索尼
2450+
SOP32
6540
只做原厂原装正品现货或订货!终端工厂可以申请样品!
SONY
23+
SOP
30000
代理全新原装现货,价格优势
MOT
25+
SOP
3600
绝对原装!现货热卖!
SONY
SOP
320
正品原装--自家现货-实单可谈
SONY/索尼
22+
SOP-32
8000
原装正品支持实单

CXK581000数据表相关新闻