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型号	功能描述	生产厂家企业	LOGO
CXK581000AM	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AM-10LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AM-10SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AM-55LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AM-55SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AM-70LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AM-70SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AP	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AP-10LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AP-10SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AP-55LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AP-55SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AP-70LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AP-70SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000ATM	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000ATM-10LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000ATM-10SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000ATM-55LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000ATM-55SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000ATM-70LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000ATM-70SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AYM	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AYM-10LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AYM-10SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AYM-55LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AYM-55SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AYM-70LL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000AYM-70SL	131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin	SONYSony Corporation 索尼	SONY
CXK581000M	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000M-10L	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000M-10LL	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000M-12L	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000M-12LL	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000M-15L	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000M-15LL	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000P	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000P-10L	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000P-10LL	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000P-12L	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000P-12LL	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000P-15L	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK581000P-15LL	131072-word x 8-bit HIGH SPEED COMS STATIC RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required	SONYSony Corporation 索尼	SONY
CXK5814P	2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.	SONYSony Corporation 索尼	SONY
CXK5814P-35	2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.	SONYSony Corporation 索尼	SONY
CXK5814P-35L	2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.	SONYSony Corporation 索尼	SONY
CXK5814P-45	2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.	SONYSony Corporation 索尼	SONY
CXK5814P-45L	2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.	SONYSony Corporation 索尼	SONY
CXK5814P-55	2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.	SONYSony Corporation 索尼	SONY
CXK5814P-55L	2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.	SONYSony Corporation 索尼	SONY
CXK5816	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PN	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PN/M-10	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PN/M-10L	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PN/M-12	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PN/M-12L	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PN/M-15	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PN/M-15L	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PNSLASHM-10	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PNSLASHM-10L	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY
CXK5816PNSLASHM-12	2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM 2048 word x 8 Bit High Speed CMOS Static RAM	SONYSony Corporation 索尼	SONY

CXK58产品属性

类型
描述
型号
CXK58
制造商
SONY
制造商全称
Sony Corporation
功能描述
131072-word x 8-bit High Speed CMOS Static RAM

CXK58供应商更多...

更新时间：2026-3-11 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	CXK58257AM-10L-T6	SONY	2016+	SOP	8880	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	CXK58257AM-12L	SONY	23+	SOP	6500	全新原装假一赔十	询价
深圳市联世界科技有限公司	CXK58257AM70LX	SONY	24+/25+		33	原装正品现货库存价优	询价
深圳市英卓尔科技有限公司	CXK58257AM-70L	SONY	20+	SOP	2960	诚信交易大量库存现货	询价
深圳市振宏微科技有限公司	CXK58257AM70L	sony	23+	NA	674	专做原装正品,假一罚百!	询价
中天科工半导体（深圳）有限公司	CXK58257AM-70L-T6	SONY/索尼	25+	SOP28	32360	SONY/索尼全新特价CXK58257AM-70L-T6即刻询购立享优惠#长期有货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	CXK58257AM-70LX/-12LL	SONY	26+	SOP	890000	一级总代理商原厂原装大批量现货一站式服务	询价
深圳市豪迈兴电子有限公司	CXK58257AM-85LL	SONY	24+	SOP28	5650	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
上海鑫科润电子科技有限公司	CXK58257AM-70L	SONY	97+	SOP/28	7254	原装现货海量库存欢迎咨询	询价
标准国际(香港)有限公司	CXK58257AM-70LL	Sony	25+		141	公司优势库存热卖中!!	询价

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產品: White CoB LEDs 安裝風格: SMD/SMT 封裝/外殼: COB - Chip-on-Board 照明色彩: Warm White 波長/色溫: 3200 K 發光強度: - 光通量/輻射通量: 9000 lm 顯色指數 - CRI: 93 視角: 115 deg If - 順向電流: 2.4 A Vf - 順向電壓: 36 V 額定功率: - 長度: 34.85 mm 寬度: 34.85 mm 高度: 1.7
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2019-10-18

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找IC，尽在114IC

CXK58产品属性

CXK58供应商更多...

CXK58芯片相关品牌

CXK58规格书下载地址

CXK58参数引脚图相关

CXK58数据表相关新闻

CY15B102Q-SXM百分百原装，等你来

CX28229-13P

CXB3590-0000-000N0YAD32Q

CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J

CXD2163BR

CY14B108N-BA25XI进口原装，主营军工级IC

DdatasheetPDF页码索引