型号 功能描述 生产厂家 企业 LOGO 操作

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

SonySony Corporation

索尼

2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

SonySony Corporation

索尼

2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

SonySony Corporation

索尼

2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

SonySony Corporation

索尼

2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

SonySony Corporation

索尼

2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

SonySony Corporation

索尼

2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

SonySony Corporation

索尼

2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK5814P is a 16,384 bits high speed CMOS static RAM organized as 2,048 words x 8 bits and operates from a single 5V supply. The CXK5814P is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

2048-WORD 8 BIT HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit High Speed CMOS Static RAM

SonySony Corporation

索尼

CXK58产品属性

  • 类型

    描述

  • 型号

    CXK58

  • 制造商

    SONY

  • 制造商全称

    Sony Corporation

  • 功能描述

    131072-word x 8-bit High Speed CMOS Static RAM

更新时间:2025-10-22 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SONY/索尼
24+
NA/
3262
原装现货,当天可交货,原型号开票
SONY
2016+
SOP-32
8880
只做原装,假一罚十,公司可开17%增值税发票!
SONY
25+
SOP38
472
原装正品,假一罚十!
SONY
24+
SOP32
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SONY
1902+
SOP38
2734
代理品牌
SONY
20+
SOP38
2960
诚信交易大量库存现货
SONY/索尼
22+
SOP32
8000
原装正品支持实单
24+
SOP
34
SONY
2015+
SOP
19889
一级代理原装现货,特价热卖!
SONY
25+
4
公司优势库存 热卖中!!

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