IF Amplifier for M-ary FSK Pagers

High-speed paging systems that employ M-ary signals are about to enter service. Sony strongly supports this new service with three IF ICs: the CXA3117N, the CXA3176N, and the CXA3179N. The CXA3117N, which adopts a comparator system that does not require an A/D converter, and the CXA3179N, which

Achieving Low Power and High Speed in Paging System IF IC

High-speed paging systems that employ M-ary signals are about to enter service. Sony strongly supports this new service with three IF ICs: the CXA3117N, the CXA3176N, and the CXA3179N. The CXA3117N, which adopts a comparator system that does not require an A/D converter, and the CXA3179N, which

IF Amplifier for M-ary FSK Pagers

RF modulator IC for VCR and VDP

RF modulator IC for VCR and VDP ■Overview The AN3117S and AN3117SA are RF modulator ICs for VCR and VDP. They provide excellent high frequency characteristics by adopting the high performance RF os cillation circuit. ■Features •Excellent in higher harmonic characteristics of RF

RF modulator IC for VCR and VDP

RF modulator IC for VCR and VDP ■Overview The AN3117S and AN3117SA are RF modulator ICs for VCR and VDP. They provide excellent high frequency characteristics by adopting the high performance RF os cillation circuit. ■Features •Excellent in higher harmonic characteristics of RF

RF modulator IC for VCR and VDP

RF modulator IC for VCR and VDP ■Overview The AN3117S and AN3117SA are RF modulator ICs for VCR and VDP. They provide excellent high frequency characteristics by adopting the high performance RF os cillation circuit. ■Features •Excellent in higher harmonic characteristics of RF

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. FEATURES ● TrenchMOS output stage ● Current limiting ● Overload protection ● Overtemperature protection ● Protection latched reset by

3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3