Balun Transformer

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封装/外壳：5-SMD 模块 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BALUN 500KHZ-300MHZ 1:4 5SMD MOD RF/IF，射频/中频和 RFID 巴伦转换器 ，平衡-不平衡转换器

XFMR,RF,SGL,RAC,1:4CT,0.5- NPB

XFMR,RF,SGL,RAC,1:4CT, T&R NPB

封装/外壳：6-SMD 模块，5 引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BALUN 500KHZ-300MHZ 1:4 6SMD MOD RF/IF，射频/中频和 RFID 巴伦转换器 ，平衡-不平衡转换器

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

UHF power LDMOS transistor

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

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