位置:首页 > IC中文资料第12467页 > CW126001UKTM
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. They feature input matching, high efficiency, and thermallyenhanced packages. Features • GaN on SiC HEMT technology • Input matched • Ty | WOLFSPEED | |||
Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz 文件:615.07 Kbytes Page:9 Pages | Cree 科锐 | |||
Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz 文件:615.07 Kbytes Page:9 Pages | Cree 科锐 | |||
Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz 文件:615.07 Kbytes Page:9 Pages | Cree 科锐 | |||
Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz 文件:615.07 Kbytes Page:9 Pages | Cree 科锐 |
CW126001UKTM产品属性
- 类型
描述
- 型号
CW126001UKTM
- 制造商
ST Ericsson
- 功能描述
- Tape and Reel
- 制造商
ST-Ericsson
- 功能描述
- Tape and Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CREE |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
INFINEON |
23+ |
7000 |
|||||
Wolfspeed |
22+ |
H-36248-2 |
1200 |
只做原装,假一罚十价格低。 |
|||
WOLFSPEED |
24+ |
N/A |
1384 |
原装原装原装 |
|||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Infineon Technologies |
22+ |
9000 |
原厂渠道,现货配单 |
||||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271743邹小姐 |
|||
INFINEON/英飞凌 |
24+ |
244 |
现货供应 |
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DdatasheetPDF页码索引
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