封装/外壳：2-SMD，扁平引线 包装：卷带（TR） 描述：SCHOTTKY BARRIER DIODE, HIGH VBR 分立半导体产品 二极管 - 整流器 - 单

600V 20A a MOS Power Transistor

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.199Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

600V 20A a MOS TM Power Transistor

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

20.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

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20.0 Ampere Insulated Dual Common Cathode Super Fast Recovery Rectifiers

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