AC Current Probes

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Current Transformers - Indoor Toroidal CT Series

SMALLCURRENTTRANSFORMERS •Toroidaldesign. •Suppliedwith24insulatedsecondaryleads,terminatedwithcrimpedringconnectors. •Suitableforusewithbare(uninsulated)primaryconductorincircuitsupto600V(4KVHipot);orathighervoltageswhenasuitablyinsulatedconductorisu

Motor Protection Analyzer

FEATURES MEASUREMENTOF: •Current •Voltage •Frequency •PowerFactor(PF) •ReactivePower(KVA) •RealPower(KW) •EnergyConsumption(KWH) REPORTS: •Voltage&Currentreport •PF,KVA,KWH,KWreport •AdjustedValuesreport •TotalMotorRunningTimereport •StartModerepor

3.3V, 125Mbps, 155Mbps Clock and Data Recovery

GeneralDescription TheSY69753ALisacompleteClockRecoveryandDataRetimingintegratedcircuitforOC-3/STS-3applicationsat155MbpsNRZ.ThedeviceisideallysuitedforSONET/SDH/ATMapplicationsandotherhigh-speeddatatransmissionsystems. Clockrecoveryanddataretimingisperforme

STROBE FLASHER USE

STROBEFLASHERUSE •VCES................................................................................400V •ICM....................................................................................130A APPLICATION StrobeFlasher.

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

STROBEFLASHERUSE •VCES................................................................................400V •ICM....................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE •VCES...............................................................................400V •ICM....................................................................................130A •DriveVoltageVGE=4V •SmallPackageMP-3 APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE •VCES...............................................................................400V •ICM....................................................................................130A •DriveVoltageVGE=4V •SmallPackageMP-3 APPLICATION StrobeFlasher.

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

STROBEFLASHERUSE •VCES...............................................................................400V •ICM....................................................................................130A •DriveVoltageVGE=4V •SmallPackageMP-3 APPLICATION StrobeFlasher.

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

STROBEFLASHERUSE •VCES................................................................................400V •ICM....................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE •VCES................................................................................400V •ICM....................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE •VCES................................................................................400V •ICM....................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE •VCES...............................................................................400V •ICM...................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE •VCES...............................................................................400V •ICM...................................................................................130A APPLICATION StrobeFlasher.

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

STROBEFLASHERUSE •VCES...............................................................................400V •ICM...................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE ●VCES...............................................................................400V ●ICM...................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE ●VCES...............................................................................400V ●ICM...................................................................................130A APPLICATION StrobeFlasher.

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

STROBEFLASHERUSE ●VCES...............................................................................400V ●ICM...................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE •VCES................................................................................400V •ICM....................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE •VCES................................................................................400V •ICM....................................................................................130A APPLICATION StrobeFlasher.

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

STROBEFLASHERUSE •VCES................................................................................400V •ICM....................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE ●VCES...............................................................................400V ●ICM...................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE ●VCES...............................................................................400V ●ICM...................................................................................130A APPLICATION StrobeFlasher.

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

STROBEFLASHERUSE ●VCES...............................................................................400V ●ICM...................................................................................130A APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE APPLICATION StrobeFlasher.

STROBE FLASHER USE

STROBEFLASHERUSE ●VCES...............................................................................400V ●ICM...................................................................................130A APPLICATION StrobeFlasher.

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

STROBEFLASHERUSE VCES...............................................................................400V ICM...................................................................................130A APPLICATION StrobeFlasher.

TEMPERATURE SENSING SMD CRYSTAL (2.0 x 1.6 x 0.8mm)

FEATURES: •HIGHFREQUENCYSTABILITY •EXCELLENTTHERMALCOUPLING •FORMOBILECOMMUNICATION

CT2100-400 MICROPROCESSOR CONTROLLED QUAD SOLID STATE RELAY

DESCRIPTION TheCT2100-400isaquadsolidstaterelay.ThedevicehasbeendesignedtoprovideaninterfacewhichoperatesasasimplecomputerI/Oport.Theswitchesarecontrolledbyasingledatawordwhichtheprocessorwritestoaninternalcontrollatch.Inadditiontothebasicswitchfun

TEMPERATURE SENSING SMD CRYSTAL (2.5 x 2.0 x 1.0mm)

FEATURES: •HIGHFREQUENCYSTABILITY •EXCELLENTTHERMALCOUPLING •FORMOBILECOMMUNICATION

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

Split SCR/Diode POW-R-BLOK??Modules 20 Amperes/800 Volts

Description: PowerexSplitSCR/DiodePOW-R-BLOK™Modulesaredesignedforuseinapplicationsrequiringcontrolandrectification.Themodulesareisolatedforeasymountingwithothercomponentsoncommonheatsinks. Features: □IsolatedMounting □GlassPassivatedChips □MetalBaseplate □

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

Wire-wound Chip Inductors - Open Wound

CT2214F&CT4015FSeries From1.65nHto12.55nH CHARACTERISTICS Description:SMDaircoilinductor. Applications:Designedtooperateawidefrequencyrangeapplication.AlsodesignedtooperateinhighQapplications. OperatingTemperature:-40°Cto125°C InductanceTolera

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603

Multilayer technology

SMDmultilayertransientvoltagesuppressors,standardseries Multilayervaristors(MLVs) Standardseries Features ■ESDacc.toIEC61000-4-2level4(8kVcontact,15kVairdischarge) ■Surgecurrentupto1200A ■Bidirectionalprotection ■Noderatingupto125°C(forcasesizes≥0603