CotoMOS® CT126/CS126

The CT126 and CS126 feature high current switching capability to 2.0A with a low on resistance of 0.5Ω Maximum. Designed for Security, Measurement and Instrumentation applications the CotoMOS® relay is capable of handling 40V load conditions. If your requirements are different please contact your Co • Contact Form: 1A\n• Load Voltage: 40V Maximum\n• Operation LED Current: 3.0mA Maximum\n• Load Current: 2.0A Maximum\n• On-Resistance: 0.5Ω Maximum\n• Low Off-State Leakage Current: 1.0μA Maximum\n• I/O Breakdown Voltage: 1500Vrms Minimum\n• Suffix - H for I/O Breakdown Voltage: 5000Vrms Minimum;

Contact Form: 1a Load Voltage: 40V Maximum

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封装/外壳：6-DIP（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NO 2A 0-40V 继电器 固态继电器

封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：SSR RELAY SPST-NO 2A 0-40V 继电器 固态继电器

MAXIMUM RATINGS, ELECTRICAL SPECIFICATIONS

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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