丝印代码：CSD19535KCS；CSD19535KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 100V, 3.1mΩ, TO-220 NexFET™ powe

丝印代码：CSD19535KCS；CSD19535KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 100V, 3.1mΩ, TO-220 NexFET™ powe

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 150A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

采用 TO-220 封装的单路、3.6mΩ、100V、N 沟道 NexFET™ 功率 MOSFET

这款 100V，3.1mΩ，TO-220 NexFET 功率 MOSFET 被设计成在功率转换应用中最大限度地降低损耗。 • 超低 Qg 和 Qgd\n• 低热阻\n• 雪崩额定值\n• 无铅引脚镀层\n• 符合 RoHS 环保标准\n• 无卤素\n• 晶体管 (TO)-220 塑料封装;

CSD19535KCS, 100 V N-Channel NexFET Power MOSFET

文件：804.91 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

100V N-Channel NexFET Power MOSFET

文件：339.5 Kbytes Page：12 Pages

100V N-Channel NexFET Power MOSFET

文件：339.5 Kbytes Page：12 Pages

SURFACE MOUNT DRUM CORE INDUCTOR

文件：16.12 Kbytes Page：1 Pages