isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 150A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

CSD19535KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 100V, 3.1mΩ, TO-220 NexFET™ powe

CSD19535KCS, 100 V N-Channel NexFET Power MOSFET

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采用 TO-220 封装的单路、3.6mΩ、100V、N 沟道 NexFET™ 功率 MOSFET

CSD19535KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 100V, 3.1mΩ, TO-220 NexFET™ powe

100V N-Channel NexFET Power MOSFET

文件：339.5 Kbytes Page：12 Pages