Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

600 V, 1 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

600 V Discrete Silicon Carbide Schottky Diodes

Low forward voltage (Vf) drop over temperatureZero reverse-recovery charge for fast switching operationsRobust MPS technologyHigh reverse-voltage blocking capability • Low forward voltage (Vf) drop over temperature\n• Zero reverse-recovery charge for fast switching operations\n• Robust MPS technology\n• High reverse-voltage blocking capability;

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 600V 2.2A TO220-2 分立半导体产品 二极管 - 整流器 - 单

丝印代码：CSD01060；Silicon Carbide Schottky Diode

文件：627.57 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

文件：627.57 Kbytes Page：6 Pages

ZERO RECOVERY RECTIFIER

文件：211.87 Kbytes Page：5 Pages

ZERO RECOVERY RECTIFIER

文件：211.87 Kbytes Page：5 Pages

ZERO RECOVERY RECTIFIER

文件：211.87 Kbytes Page：5 Pages

ZERO RECOVERY RECTIFIER

文件：211.87 Kbytes Page：5 Pages

Coarse Wavelength Division Multiplexer (CWDM) Add/Drop Filter

文件：162.11 Kbytes Page：3 Pages