NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Suitable for RF Amplifier in FM/AM Radios

0.400W RF NPN Transistor. 20V Vceo, 0.015A Ic, 40 - 260 hFE.

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Suitable for RF Amplifier in FM/AM Radios

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Suitable for RF Amplifier in FM/AM Radios

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Suitable for RF Amplifier in FM/AM Radios

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

RECORDING Y/C AMPLIFIER

Description CXA1047M is a bipolar IC developed to process the recording signals (luminance/chroma signals) of 8mm videos.

Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications

Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier chain with a single input and output. The PA has a single RF input for both the GSM900

NPN SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 40mΩ at 4A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 10V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 44mΩ at 5A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching