位置：首页 > IC中文资料第9462页 > CSB857B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSB857B | PNP / NPN PLASTIC POWER TRANSISTORS 文件：82.34 Kbytes Page：3 Pages | CDIL |   | |
CSB857B | 40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 60 - 120 hFE. | CDIL | | |
857 Series High Temp Card Edge Connector | Black | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator Features 0.156 (3.96mm) Contact Spacing by 0.200 (5.08mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, 0.473 (12.01mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configuratio | EDAC 亚得电子 | | ||
General Purpose Transistor Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified. | COMCHIP 典琦 | | ||
General Purpose Transistor Features - For AF input stages and driver applications. - High current gain. - Low collector-emitter saturation voltage. - Low noise between 30Hz and 15kHz. - AEC-Q101 Qualified. | COMCHIP 典琦 | | ||
General Purpose Transistor Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified. | COMCHIP 典琦 | | ||
boxes and ancillary products 文件：3.51246 Mbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
CSB857B产品属性
- 类型
描述
- 型号
CSB857B
- 功能描述
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MURATA/村田 |
19+ |
SMD |
6000 |
原装现货 |
|||
murata |
24+ |
SMD |
64580 |
原装现货假一赔十 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
MURATA/村田 |
18+ |
DIP3 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
MURATA |
2023+ |
SOP |
50000 |
原装现货 |
|||
MURATA/村田 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
MURATA/村田 |
23+ |
6800 |
专注配单,只做原装进口现货 |
||||
MURATA |
25+ |
SMD |
8000 |
只有原装 |
|||
MURATA |
25+23+ |
SMD |
21176 |
绝对原装正品全新进口深圳现货 |
|||
MURATA |
24+ |
SMD |
8000 |
新到现货，只做全新原装正品 |
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CSB857B规格书下载地址
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CSB857B数据表相关新闻
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DdatasheetPDF页码索引
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