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CSB1058

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

NPN EPITAXIAL PLANAR SILICON TRANSISTOR Low Frequency Power Amplifier. Complementary CSB1058

CDIL

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

POLYFET

Dual JFET Input Precision High Speed Op Amp?

文件:175.73 Kbytes Page:3 Pages

LINER

凌力尔特

Dual and Quad, JFET Input Precision High Speed Op Amps

文件:869.85 Kbytes Page:12 Pages

LINER

凌力尔特

Dual and Quad, JFET Input Precision High Speed Op Amps

文件:869.85 Kbytes Page:12 Pages

LINER

凌力尔特

Dual and Quad, JFET Input Precision High Speed Op Amps

文件:869.85 Kbytes Page:12 Pages

LINER

凌力尔特

CSB1058产品属性

  • 类型

    描述

  • 型号

    CSB1058

  • 制造商

    CDIL

  • 制造商全称

    Continental Device India Limited

  • 功能描述

    NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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