Silicon N-Channel Power MOSFET

General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications

Silicon N-Channel Power MOSFET

General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications

12V-300V NMOS

12V-300V NMOS

N-Channel Enhancement MOSFET

Application o Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DC/DC Power Supplies

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM150N30E uses advanced trench technology and design to provide excellent RDS(ON) wit

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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OptiMOS?? Power-Transistor

文件：318.56 Kbytes Page：9 Pages

OptiMOS?? Power-Transistors

文件：325.25 Kbytes Page：10 Pages