低电压无线遥控发射芯片

● 1.8-3.6V低电压\r\n● 二次谐波抑制技术\r\n● 锁相环技术\r\n● 低功耗适合纽扣电池供电\r\n● 发射电流14mA\r\n● 检测无数据零功耗\r\n● 普通纽扣电池可以使用三四年\r\n● 完全兼容PT4450 F113\r\n● 搭配我司高灵敏度接收芯片LR680或者接收模块LR45A效果最佳;

Compact 8-11 Pin Commercial Relay Bases

• DIN rail (EN50022) or chassis screw mounting • Screw driver release DIN clip • Rising saddle terminals for ease of wire insertion • Accepts fork, ferule and ring terminals (ring non IP20 only) • 2 x 2.5mm2 cable acceptance • 2x1.5mm2 bootlace crimp • IP20 finger protection types • Relay

Compact 8-11 Pin Commercial Relay Bases

• DIN rail (EN50022) or chassis screw mounting • Screw driver release DIN clip • Rising saddle terminals for ease of wire insertion • Accepts fork, ferule and ring terminals (ring non IP20 only) • 2 x 2.5mm2 cable acceptance • 2x1.5mm2 bootlace crimp • IP20 finger protection types • Relay

Compact 8-11 Pin Commercial Relay Bases

• DIN rail (EN50022) or chassis screw mounting • Screw driver release DIN clip • Rising saddle terminals for ease of wire insertion • Accepts fork, ferule and ring terminals (ring non IP20 only) • 2 x 2.5mm2 cable acceptance • 2x1.5mm2 bootlace crimp • IP20 finger protection types • Relay

无源晶振

无源晶振

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages