SMD Power Shunt resistor

Suitable for automatic pick and place 4 – Terminals connection Excellent long-term stability AEC-Q200 qualified Suitable for mounting on DCB/IMS substrate RoHS & REACH Compliant

厚膜芯片电阻

厚膜芯片电阻由印刷在陶瓷基板上的厚膜电阻层制成。厚膜电阻层是金属氧化物的混合物。表面贴装芯片电阻具有电镀锡（Sn）外部端子，用于电路板焊接。电阻组件由环氧树脂涂层保护。 \n符合RoHS规范*\n适用于多数的焊接工艺\n纸带和滚动条标准包装\n超低铅（Pb）含量*\n高压\n高功率\n耐浪涌\n抗硫化;

CRS-A Series High Power Anti-Surge Resistor

Features ■ Thick film technology ■ Power rating up to 2 watts at 70 °C ■ High power surge withstanding ■ Sulfur-resistant design (ASTM B-809) ■ RoHS compliant* and halogen free** ■ AEC-Q200 compliant Applications ■ Automotive systems: - Driver assistant - Infotainment - Lighting ■

DUAL OUTPUT, 0.5 WATT

DESCRIPTION CRD dual-output DC/DC converters offer excellent regulation and isolation in an industry-standard DIP package. Available in 5V or 12V input versions, the CRD is ideal for industrial and EDP applications. The CRD features short-circuit protection and 500 VDC isolation. Please see the C

1/2 WATT

DESCRIPTION CRS DC/DC converters offer excellent regulation and isolation in an industry standard DIP package. Available in 5 or 12 Volt input versions, the CRS is perfect for industrial and EDP applications. The CRS features short circuit protection and 500 VDC isolation. Please see the CRD seri

DUAL OUTPUT, 0.5 WATT

DESCRIPTION CRD dual-output DC/DC converters offer excellent regulation and isolation in an industry-standard DIP package. Available in 5V or 12V input versions, the CRD is ideal for industrial and EDP applications. The CRD features short-circuit protection and 500 VDC isolation. Please see the C

1/2 WATT

DESCRIPTION CRS DC/DC converters offer excellent regulation and isolation in an industry standard DIP package. Available in 5 or 12 Volt input versions, the CRS is perfect for industrial and EDP applications. The CRS features short circuit protection and 500 VDC isolation. Please see the CRD seri

1210贴片晶振

High Power Anti-Surge Resistor

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DC-DC电源模块

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board