封装/外壳：1206（3216 公制） 包装：卷带（TR） 描述：RES SMD 12 OHM 5% 1/4W 1206 电阻器 片式电阻器 - 表面贴装

Lead (Pb)-Bearing Thick Film Chip Resistors

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

Airfast RF Power LDMOS Transistor