RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

RF Power Field Effect Transistors

Airfast RF Power LDMOS Transistor

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers

RF Power Field Effect Transistors

EVALUATION FIXTURE

FEATURES * STAND-ALONE CAPABILITY * FLEXIBLE CLOCK PROGRAMMING * USER-CONFIGURABLE A/D CONVERTER OPERATION * ANALOG BREADBOARD AREA * DIGITAL BREADBOARD AREA * FLEXIBLE REFERENCE VOLTAGE PROGRAMMING APPLICATIONS * DATA ACQUISTION * PERSONAL DIGITAL ASSISTANTS * 4- OR 5-WIRE RESISTIVE

LM25007 42V, 0.5A Step-Down Switching Regulator

1FEATURES 2• Integrated 0.74Ω N-Channel MOSFET Switch • Guaranteed 0.5A Output Current • Ultra-Fast Transient Response • Up to 800kHz Operation • No Control Loop Compensation Required • Vin Feed Forward Provides Constant Operating Frequency • 2% Accurate 2.5V Feedback from -40°C to 12

SM74304 High Voltage (80V) Step Down Switching Regulator

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