Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

SiBOD 3 CHIP TO220 - T0220-3203B CR LOGO

This product OBSOLETE and has been replaced by the pxxx2a_ and pxxx3a_ Series TO-220 two-chip SIDACtor® devices. Please consult Littelfuse application engineering and datasheets for more information.

封装/外壳：TO-220-3（SMT）标片 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 270VWM TO220 电路保护 TVS - 二极管

Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

2-Phase IMVP-II & IMVP-III Core Controller for Mobile CPUs

GENERAL DESCRIPTION The ADP3203 is a 1- or 2-phase hysteretic peak current dc-to-dc buck converter controller dedicated to power a mobile processor’s core. The optimized low voltage design is powered from the 3.3 V system supply and draws only 10 µA maximum in shutdown. The nominal output volta

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURES • Complementary to KTA1271.

SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ener

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur