Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) Complementary Dual CPH5

Features • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting • The CPH5518 consists of two chips encapsulated in a package which are equivalent to the CPH3116 and the CPH3216, respectively • Ultrasmall package facilitate mini

PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

High-Current Switching Applications Features • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting. • The CPH5518 consists of two chips encapsulated in a package which are equivalent to the CPH3116 and the CPH3216, respectively

双极晶体管，(-)50V，(-)3A，低饱和压，互补双 CPH5

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) Complementary Dual CPH5

Features • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting • The CPH5518 consists of two chips encapsulated in a package which are equivalent to the CPH3116 and the CPH3216, respectively • Ultrasmall package facilitate mini

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) Complementary Dual CPH5

Features • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting • The CPH5518 consists of two chips encapsulated in a package which are equivalent to the CPH3116 and the CPH3216, respectively • Ultrasmall package facilitate mini

High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

High-Current, High-Performance DrMOS Power Module

General Description The AOZ5518QI is a high efficiency synchronous buck power stage module consisting of two asymmetrical MOSFETs and an integrated driver. The MOSFETs are individually optimized for operation in the synchronous buck configuration. The High-Side MOSFET is optimized to achieve

High Current Chokes

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POWER MOS 7 FREDFET

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POWER MOS 7 R FREDFET

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