NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). • High allowable power dissipation. Applications • DC

NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 22 (7/30) AWG Tinned Copper 0.030 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.050+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLE 1061 80C 300V VW-1 22 AWG --- LLXXXX CSA AWM I A/B 80C 300 VOLTS FT1 CE ROHS {0} * = Factory

4700

文件：48.7 Kbytes Page：1 Pages

187.5 MHz Bandpass Filter

文件：58.63 Kbytes Page：3 Pages

Low-Profile Intelligent Combination Smoke Detector

文件：567.01 Kbytes Page：2 Pages

Customer Specification

文件：69.88 Kbytes Page：3 Pages