Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip

Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metaliz

P-Channel MOSFET Die Enhancement-Mode

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Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch

GENERAL DESCRIPTION The ADG794 is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on resistance variation is typically less than 1.2 Ω o

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch

GENERAL DESCRIPTION The ADG794 is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on resistance variation is typically less than 1.2 Ω o

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch

GENERAL DESCRIPTION The ADG794 is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on resistance variation is typically less than 1.2 Ω o

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 6000 V Mean forward current 1060 A Surge current 20 kA

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 6000 V Mean forward current 1160 A Surge current 20 kA