Small Signal Transistor PNP - Low VCE(SAT) Transistor Chip

PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

Small Signal Transistor PNP - Low VCE(SAT) Transistor Chip

Chip Form: Low VCE(sat) Transistor Central Semiconductor

PNP - Low VCE(SAT) Transistor Die 1.0 Amp, 60 Volt

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Automotive Isolation Amplifier with R2Coupler Isolation

Description The ACPL-782T isolation amplifier was designed for voltage and current sensing in electronic motor drives and battery system monitoring. In a typical implementation, and motor currents flow through an external resistor and the resulting analog voltage drop is sensed by the ACPL-782T.

2.5 ohm Quad SPST Switches in Chip Scale Package

GENERAL DESCRIPTION The ADG781, ADG782, and ADG783 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation and high switching speed, low on resistance, low leakage currents and

2.5 ohm Quad SPST Switches in Chip Scale Package

GENERAL DESCRIPTION The ADG781, ADG782, and ADG783 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation and high switching speed, low on resistance, low leakage currents and

3rd generation Intel짰 Core??processor-based platform

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LGA1155 3rd Generation Intel짰 Core??i7/i5/i3/Pentium ATX with DVI/VGA, DDR3, SATA III

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