Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip

PROCESS DETAILS Die Size 22 x 17 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 14 x 9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

P-Channel MOSFET Die Enhancement-Mode

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Chip Form: P-Chan Enhancement Mode MOSFET

ZENER DIODE CHIPS

• 1N746A THRU 1N759A AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/127 • 1N4370A THRU 1N4372A AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/127 • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF S

LEADLESS PACKAGE FOR SURFACE MOUNT

• 1N746AUR-1 THRU 1N759AUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127 • 1N4370AUR-1 THRU 1N4372AUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127 • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * Low saturation voltage * 300V VCEO COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757

0.7 inch ( 17.22mm ) 5X7 DOT MATRIX LED DISPLAY

DESCRIPTION The UVP-747/757 is 0.7 inch (17.22mm) height 5X7 dot matrix display. Single color display have the choices of three bright colors-AlGaAs red/green/yellow. All device have gray face and white dot. The AlGaAs red LED chip are made from AlGaAs on a non-transparent GaAs substrate. The

PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS

FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt