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位置：首页 > IC中文资料第4362页 > CP7

CP7晶体管资料

  • CP701别名：CP701三极管、CP701晶体管、CP701晶体三极管

  • CP701生产厂家：

  • CP701制作材料：Si-NPN

  • CP701性质：射频/高频放大 （HF）_功率放大 （L）

  • CP701封装形式：直插封装

  • CP701极限工作电压：60V

  • CP701最大电流允许值：5A

  • CP701最大工作频率：40MHZ

  • CP701引脚数：2

  • CP701最大耗散功率：15W

  • CP701放大倍数：

  • CP701图片代号：E-44

  • CP701vtest：60

  • CP701htest：40000000

  • CP701atest：5

  • CP701wtest：15

  • CP701代换 CP701用什么型号代替：

CP7价格

参考价格：￥0.0000

型号：CP7061 品牌：Eveready 备注：这里有CP7多少钱，2025年最近7天走势，今日出价，今日竞价，CP7批发/采购报价，CP7行情走势销售排行榜，CP7报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CP70

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI
CP701

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness9.0MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP70137

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI
CP70237

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI
CP70301537

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI
CP70337

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI
CP704

Small Signal Transistors NPN - Amp Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness9.0MILS BaseBondingPadArea3.7X3.7MILS EmitterBondingPadArea4.2X4.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP70437

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI
CP704V

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness7.1MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea4.2x4.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP705

Small Signal Transistor PNP - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize16x16MILS DieThickness8.0MILS BaseBondingPadArea3.75x3.75MILS EmitterBondingPadArea3.75x3.75MILS TopSideMetalization

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP707

Small Signal Transistor PNP - Darlington Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize27x27MILS DieThickness9.0MILS BaseBondingPadArea5.3x3.8MILS EmitterBondingPadArea5.3x6.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP709

Power Transistor PNP - Low Saturation Transistor Chip

PROCESSDETAILS ​​​​​​​ ProcessEPITAXIALPLANAR DieSize41.3x41.3MILS DieThickness9.0MILS BaseBondingPadArea9.5x9.2MILS EmitterBondingPadArea12.8x10.2MILS TopSideMetalizati

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP710

Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness9.0MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP710V

Small Signal Transistor PNP - High Voltage Transistor Chip

SmallSignalTransistorPNP-HighVoltageTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness7.1MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMe

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP710V-MPSA92

The CP710V-MPSA92 is a silicon PNP transistor designed for high voltage applications.

TheCP710V-MPSA92isasiliconPNPtransistordesignedforhighvoltageapplications. MECHANICALSPECIFICATIONS: DieSize26x26MILS DieThickness7.1MILS BaseBondingPadSize6.1x4.9MILS EmitterBondingPadSize5.2x5.2MILS TopSideMetalizationAl–30,000Å Bac

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP712

Power Transistor PNP - Amp/Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize75x75MILS DieThickness9.0MILS BaseBondingPadArea17x12MILS EmitterBondingPadArea31x12MILS TopSideMetalizationAl-30,000Å BackSideMetalizationTi/Ni/Ag-11,300Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP714

Small Signal Transistor PNP - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness9.0MILS BaseBondingPadArea7.9x8.7MILS EmitterBondingPadArea9.0x14MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP714V

Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness7.0MILS BaseBondingPadArea7.9x8.7MILS EmitterBondingPadArea9.0x14MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP716

Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize20x20MILS DieThickness9.0MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP716V

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19.7x19.7MILS DieThickness7.1MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP720

Small Signal Transistor PNP - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness9.0MILS BaseBondingPadArea5.7X4.0MILS EmitterBondingPadArea5.3X4.0MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP726X

Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip

PROCESSDETAILS DieSize27.6x31.5MILS DieThickness5.5MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea20.2x24.1MILS TopSideMetalizationAi-Si-35,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP734V

Small Signal Transistors NPN - Amp Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19.7x19.7MILS DieThickness7.1MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP736V

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize17.3x17.3MILS DieThickness7.1MILS BaseBondingPadArea3.9x3.9MILS EmitterBondingPadArea3.9x3.9MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP736V-2N5401

The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifi er applications.

TheCP736V-2N5401dieisaPNPsilicontransistordesignedforhighvoltageamplifierapplications. MECHANICALSPECIFICATIONS: DieSize17.3x17.3MILS DieThickness7.1MILS BaseBondingPadSize3.9x3.9MILS EmitterBondingPadSize3.9x3.9MILS TopSideMetalizationA

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP741V

Small Signal Transistors PNP - Low VCE(SAT) Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize17.7x17.7MILS DieThickness7.1MILS BaseBondingPadArea3.8x3.8MILS EmitterBondingPadArea3.8x3.8MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP753V

Small Signal Transistors PNP - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize66x66MILS DieThickness7.1MILS BaseBondingPadArea7.9x7.9MILS Emitter1BondingPadArea7.9x9.5MILS Emitter2BondingPadArea7.9x9.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizatio

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP757X

Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip

PROCESSDETAILS DieSize22x17MILS DieThickness5.9MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea14x9MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP763V

Power Transistor PNP - High Current Transistor Chip

PROCESSDETAILS ​​​​​​​ DieSize48.8x48.8MILS DieThickness7.1MILS BaseBondingPadArea7.9x7.9MILS EmitterBondingPadArea9.1x18.1MILS TopSideMetalizationAl-30,000Å BackSideMetalizationTi/Ni/Ag-2,000Å/3,000Å/20,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP764X

Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize21.7x17.7MILS DieThickness5.5MILS GateBondingPadArea4.7x4.7MILS SourceBondingPadArea6.1x7.9MILS TopSideMetalizationAl-Si-35,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP767

Small Signal Transistor PNP- Saturated Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize30x30MILS DieThickness9.0MILS BaseBondingPadArea3.85x4.20MILS EmitterBondingPadArea7.35x3.75MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-15,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP767V

Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize30x30MILS DieThickness7.1MILS BaseBondingPadArea3.9x4.2MILS EmitterBondingPadArea7.4x3.8MILS TopSideMetalizationAl-3

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP771-CXDM4060P

P-Channel MOSFET Die Enhancement-Mode

FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP771-CXDM4060P-CT

P-Channel MOSFET Die Enhancement-Mode

FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP771-CXDM4060P-WN

P-Channel MOSFET Die Enhancement-Mode

FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP773

MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip

PROCESSDETAILS DieSize39x27MILS DieThickness7.5MILS GateBondingPadArea6.5x6.5MILS SourceBondingPadArea30x20MILS TopSideMetalizationAl-40,000Å BackSideMetalizationTi/Ni/Ag-1,000Å/3,000Å/10,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP775-CWDM3011P

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP775-CWDM3011P-CM

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP775-CWDM3011P-CT

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP775-CWDM3011P-WN

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP782X

Small Signal Transistor PNP - Low VCE(SAT) Transistor Chip

PROCESSDETAILS DieSize26x26MILS DieThickness5.9MILS BaseBondingPadArea5.5x5.5MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP788X

Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP788X-2N5087

The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications.

TheCP788X-2N5087isasiliconPNPtransistordesignedforgeneralpurposeapplications. MECHANICALSPECIFICATIONS: DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadSize4.0x4.0MILS EmitterBondingPadSize5.5x5.5MILS TopSideMetalizationAl-Si–17,00

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP792

Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize11x11MILS DieThickness7.0MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea3.7x3.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP792V

Smal Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize11x11MILS DieThickness7.0MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea3.7x3.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP794R

Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip

SmallSignalMOSFETTransistor P-ChannelEnhancement-ModeTransistorChip PROCESSDETAILS DieSize15.7x15.7MILS DieThickness3.9MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea9.1x8.1MILS TopSideMetalizationAl-Si-35,000Å BackSideMetaliz

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP70_17

PELTIER MODULE

文件：724.2 Kbytes Page：8 Pages

CUI

CUI Inc.

CUI
CP701-2N5416-CT

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP701-2N5416-CT

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
CP70137

PELTIER MODULE

文件：724.2 Kbytes Page：8 Pages

CUI

CUI Inc.

CUI
CP70237

PELTIER MODULE

文件：724.2 Kbytes Page：8 Pages

CUI

CUI Inc.

CUI
CP70237

包装：散装 描述：PELTIER, 20 X 20 X 3.8 MM, 7 A, 风扇，热管理 热 - 热电、Peltier 模块

CUID

CUI Devices

CUID
CP70301537

包装：散装 描述：PELTIER, 30 X 15 X 3.8 MM, 7 A, 风扇，热管理 热 - 热电、Peltier 模块

CUID

CUI Devices

CUID
CP70301537

PELTIER MODULE

文件：724.2 Kbytes Page：8 Pages

CUI

CUI Inc.

CUI
CP7032M7680LABK

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件：117.24 Kbytes Page：4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS
CP7032M7680LASP

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件：117.24 Kbytes Page：4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS
CP7032M7680LAT0

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件：117.24 Kbytes Page：4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS
CP7032M7680LAT3

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件：117.24 Kbytes Page：4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS
CP7032M7680LBBK

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件：117.24 Kbytes Page：4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS
CP7032M7680LBSP

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件：117.24 Kbytes Page：4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

CP7产品属性

  • 类型

    描述

  • 型号

    CP7

  • 制造商

    Atlas Sound

  • 功能描述

    400W Rms X 2Ch 8 Ohm/70V Professional Stereo Amplifier

CP7供应商更多...

更新时间：2025-6-13 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
CP7068AMT
CYPRESS/赛普拉斯
24+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市科芯源微电子有限公司
CP7034ATT
CYPRESS/赛普拉斯
25+
PLAT
996880
只做原装,欢迎来电资询
询价
深圳市威雅利发展有限公司
CP7068AMT
CY
0919+
QFN
14846
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳诚思涵科技有限公司
CP7068AMT
NITRDX
24+
BGA
6618
公司现货库存,支持实单
询价
深圳市明嘉莱科技有限公司
CP7034ATT
CYPRESS/赛普拉斯
13+
PLAT
880000
明嘉莱只做原装正品现货
询价
深圳市华斯顿科技有限公司
CP7044ATT
CYPRESS
25+23+
QFN
37070
绝对原装正品全新进口深圳现货
询价
深圳市澳亿芯电子科技有限公司
CP7034ATT
CYPRESS/赛普拉斯
24+
PLAT
12000
原装
询价
深圳市胜彬电子有限公司
CP7068AMT
CYPRESS
22+
QFN
8000
原装正品支持实单
询价
深圳市高捷芯城科技有限公司
CP7034ATT
CYPRESS(赛普拉斯)
24+
-
14093
正规渠道,大量现货,只等你来。
询价
深圳市湘达电子有限公司
CP7034AT
CYPRESS
2020+
PLAT
3300
绝对全新原装,一片也是批量价.
询价

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