CP7晶体管资料

  • CP701别名:CP701三极管、CP701晶体管、CP701晶体三极管

  • CP701生产厂家

  • CP701制作材料:Si-NPN

  • CP701性质:射频/高频放大 (HF)_功率放大 (L)

  • CP701封装形式:直插封装

  • CP701极限工作电压:60V

  • CP701最大电流允许值:5A

  • CP701最大工作频率:40MHZ

  • CP701引脚数:2

  • CP701最大耗散功率:15W

  • CP701放大倍数

  • CP701图片代号:E-44

  • CP701vtest:60

  • CP701htest:40000000

  • CP701atest:5

  • CP701wtest:15

  • CP701代换 CP701用什么型号代替

CP7价格

参考价格:¥0.0000

型号:CP7061 品牌:Eveready 备注:这里有CP7多少钱,2025年最近7天走势,今日出价,今日竞价,CP7批发/采购报价,CP7行情走势销售排行榜,CP7报价。
型号 功能描述 生产厂家&企业 LOGO 操作

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness9.0MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI

Small Signal Transistors NPN - Amp Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness9.0MILS BaseBondingPadArea3.7X3.7MILS EmitterBondingPadArea4.2X4.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation

CUI

CUI Inc.

CUI

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness7.1MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea4.2x4.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize16x16MILS DieThickness8.0MILS BaseBondingPadArea3.75x3.75MILS EmitterBondingPadArea3.75x3.75MILS TopSideMetalization

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - Darlington Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize27x27MILS DieThickness9.0MILS BaseBondingPadArea5.3x3.8MILS EmitterBondingPadArea5.3x6.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Power Transistor PNP - Low Saturation Transistor Chip

PROCESSDETAILS ​​​​​​​ ProcessEPITAXIALPLANAR DieSize41.3x41.3MILS DieThickness9.0MILS BaseBondingPadArea9.5x9.2MILS EmitterBondingPadArea12.8x10.2MILS TopSideMetalizati

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness9.0MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - High Voltage Transistor Chip

SmallSignalTransistorPNP-HighVoltageTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness7.1MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMe

CentralCentral Semiconductor Corp

美国中央半导体

Central

The CP710V-MPSA92 is a silicon PNP transistor designed for high voltage applications.

TheCP710V-MPSA92isasiliconPNPtransistordesignedforhighvoltageapplications. MECHANICALSPECIFICATIONS: DieSize26x26MILS DieThickness7.1MILS BaseBondingPadSize6.1x4.9MILS EmitterBondingPadSize5.2x5.2MILS TopSideMetalizationAl–30,000Å Bac

CentralCentral Semiconductor Corp

美国中央半导体

Central

Power Transistor PNP - Amp/Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize75x75MILS DieThickness9.0MILS BaseBondingPadArea17x12MILS EmitterBondingPadArea31x12MILS TopSideMetalizationAl-30,000Å BackSideMetalizationTi/Ni/Ag-11,300Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness9.0MILS BaseBondingPadArea7.9x8.7MILS EmitterBondingPadArea9.0x14MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness7.0MILS BaseBondingPadArea7.9x8.7MILS EmitterBondingPadArea9.0x14MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize20x20MILS DieThickness9.0MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19.7x19.7MILS DieThickness7.1MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness9.0MILS BaseBondingPadArea5.7X4.0MILS EmitterBondingPadArea5.3X4.0MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip

PROCESSDETAILS DieSize27.6x31.5MILS DieThickness5.5MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea20.2x24.1MILS TopSideMetalizationAi-Si-35,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistors NPN - Amp Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19.7x19.7MILS DieThickness7.1MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize17.3x17.3MILS DieThickness7.1MILS BaseBondingPadArea3.9x3.9MILS EmitterBondingPadArea3.9x3.9MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifi er applications.

TheCP736V-2N5401dieisaPNPsilicontransistordesignedforhighvoltageamplifierapplications. MECHANICALSPECIFICATIONS: DieSize17.3x17.3MILS DieThickness7.1MILS BaseBondingPadSize3.9x3.9MILS EmitterBondingPadSize3.9x3.9MILS TopSideMetalizationA

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistors PNP - Low VCE(SAT) Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize17.7x17.7MILS DieThickness7.1MILS BaseBondingPadArea3.8x3.8MILS EmitterBondingPadArea3.8x3.8MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistors PNP - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize66x66MILS DieThickness7.1MILS BaseBondingPadArea7.9x7.9MILS Emitter1BondingPadArea7.9x9.5MILS Emitter2BondingPadArea7.9x9.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizatio

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip

PROCESSDETAILS DieSize22x17MILS DieThickness5.9MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea14x9MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Power Transistor PNP - High Current Transistor Chip

PROCESSDETAILS ​​​​​​​ DieSize48.8x48.8MILS DieThickness7.1MILS BaseBondingPadArea7.9x7.9MILS EmitterBondingPadArea9.1x18.1MILS TopSideMetalizationAl-30,000Å BackSideMetalizationTi/Ni/Ag-2,000Å/3,000Å/20,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize21.7x17.7MILS DieThickness5.5MILS GateBondingPadArea4.7x4.7MILS SourceBondingPadArea6.1x7.9MILS TopSideMetalizationAl-Si-35,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP- Saturated Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize30x30MILS DieThickness9.0MILS BaseBondingPadArea3.85x4.20MILS EmitterBondingPadArea7.35x3.75MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-15,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize30x30MILS DieThickness7.1MILS BaseBondingPadArea3.9x4.2MILS EmitterBondingPadArea7.4x3.8MILS TopSideMetalizationAl-3

CentralCentral Semiconductor Corp

美国中央半导体

Central

P-Channel MOSFET Die Enhancement-Mode

FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC

CentralCentral Semiconductor Corp

美国中央半导体

Central

P-Channel MOSFET Die Enhancement-Mode

FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC

CentralCentral Semiconductor Corp

美国中央半导体

Central

P-Channel MOSFET Die Enhancement-Mode

FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC

CentralCentral Semiconductor Corp

美国中央半导体

Central

MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip

PROCESSDETAILS DieSize39x27MILS DieThickness7.5MILS GateBondingPadArea6.5x6.5MILS SourceBondingPadArea30x20MILS TopSideMetalizationAl-40,000Å BackSideMetalizationTi/Ni/Ag-1,000Å/3,000Å/10,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity

CentralCentral Semiconductor Corp

美国中央半导体

Central

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity

CentralCentral Semiconductor Corp

美国中央半导体

Central

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity

CentralCentral Semiconductor Corp

美国中央半导体

Central

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - Low VCE(SAT) Transistor Chip

PROCESSDETAILS DieSize26x26MILS DieThickness5.9MILS BaseBondingPadArea5.5x5.5MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications.

TheCP788X-2N5087isasiliconPNPtransistordesignedforgeneralpurposeapplications. MECHANICALSPECIFICATIONS: DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadSize4.0x4.0MILS EmitterBondingPadSize5.5x5.5MILS TopSideMetalizationAl-Si–17,00

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize11x11MILS DieThickness7.0MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea3.7x3.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Smal Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize11x11MILS DieThickness7.0MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea3.7x3.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

CentralCentral Semiconductor Corp

美国中央半导体

Central

Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip

SmallSignalMOSFETTransistor P-ChannelEnhancement-ModeTransistorChip PROCESSDETAILS DieSize15.7x15.7MILS DieThickness3.9MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea9.1x8.1MILS TopSideMetalizationAl-Si-35,000Å BackSideMetaliz

CentralCentral Semiconductor Corp

美国中央半导体

Central

PELTIER MODULE

文件:724.2 Kbytes Page:8 Pages

CUI

CUI Inc.

CUI

P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central

PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central

PELTIER MODULE

文件:724.2 Kbytes Page:8 Pages

CUI

CUI Inc.

CUI

PELTIER MODULE

文件:724.2 Kbytes Page:8 Pages

CUI

CUI Inc.

CUI

包装:散装 描述:PELTIER, 20 X 20 X 3.8 MM, 7 A, 风扇,热管理 热 - 热电、Peltier 模块

CUID

CUI Devices

CUID

包装:散装 描述:PELTIER, 30 X 15 X 3.8 MM, 7 A, 风扇,热管理 热 - 热电、Peltier 模块

CUID

CUI Devices

CUID

PELTIER MODULE

文件:724.2 Kbytes Page:8 Pages

CUI

CUI Inc.

CUI

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件:117.24 Kbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件:117.24 Kbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件:117.24 Kbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件:117.24 Kbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件:117.24 Kbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator

文件:117.24 Kbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

CP7产品属性

  • 类型

    描述

  • 型号

    CP7

  • 制造商

    Atlas Sound

  • 功能描述

    400W Rms X 2Ch 8 Ohm/70V Professional Stereo Amplifier

更新时间:2025-6-10 10:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AMPHENOL RF
2022+
500
原厂原装,假一罚十
CYPRESS/赛普拉斯
24+
PLAT
1000
原装现货假一赔十
NITRDX
24+
BGA
6618
公司现货库存,支持实单
CYPRESS/赛普拉斯
24+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票
ROHM
23+
2800
正品原装货价格低
CYPRESS/赛普拉斯
24+
PLAT
55623
只做全新原装进口现货
CYPRESS(赛普拉斯)
24+
-
14093
正规渠道,大量现货,只等你来。
原厂原包
24+
原装
38560
原装进口现货,工厂客户可以放款。17377264928微信同
CYPRESS
2020+
PLAT
3300
绝对全新原装,一片也是批量价.
CYPRESS
22+
QFN
8000
原装正品支持实单

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  • TEMEX
  • TURCK
  • ZETTLER

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