位置:首页 > IC中文资料第4362页 > CP7
CP7晶体管资料
CP701别名:CP701三极管、CP701晶体管、CP701晶体三极管
CP701生产厂家:
CP701制作材料:Si-NPN
CP701性质:射频/高频放大 (HF)_功率放大 (L)
CP701封装形式:直插封装
CP701极限工作电压:60V
CP701最大电流允许值:5A
CP701最大工作频率:40MHZ
CP701引脚数:2
CP701最大耗散功率:15W
CP701放大倍数:
CP701图片代号:E-44
CP701vtest:60
CP701htest:40000000
- CP701atest:5
CP701wtest:15
CP701代换 CP701用什么型号代替:
CP7价格
参考价格:¥0.0000
型号:CP7061 品牌:Eveready 备注:这里有CP7多少钱,2025年最近7天走势,今日出价,今日竞价,CP7批发/采购报价,CP7行情走势销售排行榜,CP7报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
PELTIER MODULE DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation | CUI CUI Inc. | |||
Small Signal Transistors PNP - High Voltage Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness9.0MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PELTIER MODULE DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation | CUI CUI Inc. | |||
PELTIER MODULE DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation | CUI CUI Inc. | |||
PELTIER MODULE DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation | CUI CUI Inc. | |||
PELTIER MODULE DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation | CUI CUI Inc. | |||
Small Signal Transistors NPN - Amp Switch Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness9.0MILS BaseBondingPadArea3.7X3.7MILS EmitterBondingPadArea4.2X4.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PELTIER MODULE DESCRIPTION:PELTIERMODULE FEATURES •arcTEC™structureonselectmodels •solidstatedevice •precisetemperaturecontrol •quietoperation | CUI CUI Inc. | |||
Small Signal Transistors PNP - High Voltage Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness7.1MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea4.2x4.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - High Current Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize16x16MILS DieThickness8.0MILS BaseBondingPadArea3.75x3.75MILS EmitterBondingPadArea3.75x3.75MILS TopSideMetalization | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - Darlington Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize27x27MILS DieThickness9.0MILS BaseBondingPadArea5.3x3.8MILS EmitterBondingPadArea5.3x6.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Power Transistor PNP - Low Saturation Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize41.3x41.3MILS DieThickness9.0MILS BaseBondingPadArea9.5x9.2MILS EmitterBondingPadArea12.8x10.2MILS TopSideMetalizati | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - High Voltage Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness9.0MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - High Voltage Transistor Chip SmallSignalTransistorPNP-HighVoltageTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize26x26MILS DieThickness7.1MILS BaseBondingPadArea6.1x4.9MILS EmitterBondingPadArea5.2x5.2MILS TopSideMetalizationAl-30,000Å BackSideMe | CentralCentral Semiconductor Corp 美国中央半导体 | |||
The CP710V-MPSA92 is a silicon PNP transistor designed for high voltage applications. TheCP710V-MPSA92isasiliconPNPtransistordesignedforhighvoltageapplications. MECHANICALSPECIFICATIONS: DieSize26x26MILS DieThickness7.1MILS BaseBondingPadSize6.1x4.9MILS EmitterBondingPadSize5.2x5.2MILS TopSideMetalizationAl–30,000Å Bac | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Power Transistor PNP - Amp/Switch Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize75x75MILS DieThickness9.0MILS BaseBondingPadArea17x12MILS EmitterBondingPadArea31x12MILS TopSideMetalizationAl-30,000Å BackSideMetalizationTi/Ni/Ag-11,300Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - High Current Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness9.0MILS BaseBondingPadArea7.9x8.7MILS EmitterBondingPadArea9.0x14MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness7.0MILS BaseBondingPadArea7.9x8.7MILS EmitterBondingPadArea9.0x14MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - High Voltage Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize20x20MILS DieThickness9.0MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistors PNP - High Voltage Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19.7x19.7MILS DieThickness7.1MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - High Current Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness9.0MILS BaseBondingPadArea5.7X4.0MILS EmitterBondingPadArea5.3X4.0MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip PROCESSDETAILS DieSize27.6x31.5MILS DieThickness5.5MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea20.2x24.1MILS TopSideMetalizationAi-Si-35,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistors NPN - Amp Switch Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19.7x19.7MILS DieThickness7.1MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea4.7x4.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistors PNP - High Voltage Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize17.3x17.3MILS DieThickness7.1MILS BaseBondingPadArea3.9x3.9MILS EmitterBondingPadArea3.9x3.9MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifi er applications. TheCP736V-2N5401dieisaPNPsilicontransistordesignedforhighvoltageamplifierapplications. MECHANICALSPECIFICATIONS: DieSize17.3x17.3MILS DieThickness7.1MILS BaseBondingPadSize3.9x3.9MILS EmitterBondingPadSize3.9x3.9MILS TopSideMetalizationA | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistors PNP - Low VCE(SAT) Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize17.7x17.7MILS DieThickness7.1MILS BaseBondingPadArea3.8x3.8MILS EmitterBondingPadArea3.8x3.8MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistors PNP - High Current Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize66x66MILS DieThickness7.1MILS BaseBondingPadArea7.9x7.9MILS Emitter1BondingPadArea7.9x9.5MILS Emitter2BondingPadArea7.9x9.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizatio | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESSDETAILS DieSize22x17MILS DieThickness5.9MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea14x9MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Power Transistor PNP - High Current Transistor Chip PROCESSDETAILS DieSize48.8x48.8MILS DieThickness7.1MILS BaseBondingPadArea7.9x7.9MILS EmitterBondingPadArea9.1x18.1MILS TopSideMetalizationAl-30,000Å BackSideMetalizationTi/Ni/Ag-2,000Å/3,000Å/20,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize21.7x17.7MILS DieThickness5.5MILS GateBondingPadArea4.7x4.7MILS SourceBondingPadArea6.1x7.9MILS TopSideMetalizationAl-Si-35,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP- Saturated Switch Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize30x30MILS DieThickness9.0MILS BaseBondingPadArea3.85x4.20MILS EmitterBondingPadArea7.35x3.75MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-15,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize30x30MILS DieThickness7.1MILS BaseBondingPadArea3.9x4.2MILS EmitterBondingPadArea7.4x3.8MILS TopSideMetalizationAl-3 | CentralCentral Semiconductor Corp 美国中央半导体 | |||
P-Channel MOSFET Die Enhancement-Mode FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC | CentralCentral Semiconductor Corp 美国中央半导体 | |||
P-Channel MOSFET Die Enhancement-Mode FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC | CentralCentral Semiconductor Corp 美国中央半导体 | |||
P-Channel MOSFET Die Enhancement-Mode FEATURES: •Lowon-resistance,rDS(ON)•Lowprofilegeometry •Lowgatecharge,Qgs•Metalizationsuitableforstandarddieattachtechnologies •Highdraincurrentdensity•Topmetalizationoptimizedforwirebonding APPLICATIONS: •Powermanagement•Loadswitching •Motordrives•DC | CentralCentral Semiconductor Corp 美国中央半导体 | |||
MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESSDETAILS DieSize39x27MILS DieThickness7.5MILS GateBondingPadArea6.5x6.5MILS SourceBondingPadArea30x20MILS TopSideMetalizationAl-40,000Å BackSideMetalizationTi/Ni/Ag-1,000Å/3,000Å/10,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
P-Channel MOSFET Die Enhancement-Mode APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity | CentralCentral Semiconductor Corp 美国中央半导体 | |||
P-Channel MOSFET Die Enhancement-Mode APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity | CentralCentral Semiconductor Corp 美国中央半导体 | |||
P-Channel MOSFET Die Enhancement-Mode APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity | CentralCentral Semiconductor Corp 美国中央半导体 | |||
P-Channel MOSFET Die Enhancement-Mode APPLICATIONS: •Loadswitching •Powermanagement •DC-DCconversion FEATURES: •Lowon-resistance,rDS(ON) •Lowgatecharge,Qgs •Highdraincurrentdensity | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - Low VCE(SAT) Transistor Chip PROCESSDETAILS DieSize26x26MILS DieThickness5.9MILS BaseBondingPadArea5.5x5.5MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications. TheCP788X-2N5087isasiliconPNPtransistordesignedforgeneralpurposeapplications. MECHANICALSPECIFICATIONS: DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadSize4.0x4.0MILS EmitterBondingPadSize5.5x5.5MILS TopSideMetalizationAl-Si–17,00 | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize11x11MILS DieThickness7.0MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea3.7x3.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Smal Signal Transistor PNP - Amp/Switch Transistor Chip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize11x11MILS DieThickness7.0MILS BaseBondingPadArea3.7x3.7MILS EmitterBondingPadArea3.7x3.7MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip SmallSignalMOSFETTransistor P-ChannelEnhancement-ModeTransistorChip PROCESSDETAILS DieSize15.7x15.7MILS DieThickness3.9MILS GateBondingPadArea3.9x3.9MILS SourceBondingPadArea9.1x8.1MILS TopSideMetalizationAl-Si-35,000Å BackSideMetaliz | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PELTIER MODULE 文件:724.2 Kbytes Page:8 Pages | CUI CUI Inc. | |||
P-Channel JFET Die 文件:465.81 Kbytes Page:9 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PNP - High Voltage Transistor Die 文件:530.8 Kbytes Page:9 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PELTIER MODULE 文件:724.2 Kbytes Page:8 Pages | CUI CUI Inc. | |||
PELTIER MODULE 文件:724.2 Kbytes Page:8 Pages | CUI CUI Inc. | |||
包装:散装 描述:PELTIER, 20 X 20 X 3.8 MM, 7 A, 风扇,热管理 热 - 热电、Peltier 模块 | CUID CUI Devices | |||
包装:散装 描述:PELTIER, 30 X 15 X 3.8 MM, 7 A, 风扇,热管理 热 - 热电、Peltier 模块 | CUID CUI Devices | |||
PELTIER MODULE 文件:724.2 Kbytes Page:8 Pages | CUI CUI Inc. | |||
5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator 文件:117.24 Kbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator 文件:117.24 Kbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator 文件:117.24 Kbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator 文件:117.24 Kbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator 文件:117.24 Kbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
5x3.2mm and 7x5mm Low Cost Programmable Clock Oscillator 文件:117.24 Kbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 |
CP7产品属性
- 类型
描述
- 型号
CP7
- 制造商
Atlas Sound
- 功能描述
400W Rms X 2Ch 8 Ohm/70V Professional Stereo Amplifier
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AMPHENOL RF |
2022+ |
500 |
原厂原装,假一罚十 |
||||
CYPRESS/赛普拉斯 |
24+ |
PLAT |
1000 |
原装现货假一赔十 |
|||
NITRDX |
24+ |
BGA |
6618 |
公司现货库存,支持实单 |
|||
CYPRESS/赛普拉斯 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
23+ |
2800 |
正品原装货价格低 |
||||
CYPRESS/赛普拉斯 |
24+ |
PLAT |
55623 |
只做全新原装进口现货 |
|||
CYPRESS(赛普拉斯) |
24+ |
- |
14093 |
正规渠道,大量现货,只等你来。 |
|||
原厂原包 |
24+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
CYPRESS |
2020+ |
PLAT |
3300 |
绝对全新原装,一片也是批量价. |
|||
CYPRESS |
22+ |
QFN |
8000 |
原装正品支持实单 |
CP7规格书下载地址
CP7参数引脚图相关
- d7805
- d7804
- d641
- d609
- d415
- d408
- d403
- d402
- d325
- d2007
- d2004
- d2002
- d126
- d1004
- d1002
- c波段
- cw7805
- cs5532
- cs1
- CRT1553
- CRT1552
- CRT1545
- CRT1544
- CPT940B
- CPT940A
- CPT1112
- CPT1111A
- CPT1111
- CPT1110A
- CPT1110
- CPT1077
- CPT1076
- CPT1075
- cpld
- CP9C...G
- CP8C...G
- CP726X
- CP720
- CP716V
- CP716
- CP714V
- CP714
- CP712
- CP710V
- CP710
- CP709
- CP707
- CP705
- CP704V
- CP70437
- CP704
- CP70337
- CP703
- CP70237
- CP702
- CP70137
- CP701
- CP70_17
- CP6C60
- CP68H-2
- CP681
- CP667
- CP653
- CP652
- CP651
- CP650
- CP645
- CP635
- CP630
- CP624
- CP622
- CP618
- CP617
- CP616
- CP611
- CP60H-2
- CP60H
- CP608
- CP5-12
- CP457
- CP433
- CP432
- CP431
- CP430
- CP409
- CP408
- CP407
- CP406
- CP405
- CP404
- CP403
- CP402
- CP401
- CP400
- CP10-12
- CP100
- CMPTA92
- CMPTA64
CP7数据表相关新闻
CP60231H
优势渠道
2023-3-28CP30-BA1P1-M3A
CP30-BA1P1-M3A微型断路器,最适合用于机床、办公设备、通信测量仪器等的电源关闭,控制回路的超载、短路保护的断路器
2022-2-23CP82C55AZ 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:CP82C55AZ 类别集成电路(IC)接口-I/O扩展器 制造商RenesasElectronicsAmericaInc 包装:990
2021-8-30CPB103013V1375A
CPB103013V1375AOTHER20+标准封装 CPC1004NCLARE20+标准封装 CS82C55A-5INTERSIL20+标准封装 CS8411-CSCIRRUSLOGIC20+标准封装 C19B234899P4375OTHER20+标准封装 C55527261375OTHER20+标准封装 C9920033392375OTHER20+标准封装 CAT525JICATALYSTSEMICONDUCTOR20+标准封装 CC1-100-JBWRCDC
2021-6-5CPB007605RA375A
CPB007605RA375AOTHER20+标准封装 CS4361-CZZRCIRRUSLOGIC20+标准封装 CS4922-CLCRYSTALSEMICONDUCTOR20+标准封装 CS5203A-1GDPR3CHERRYSEMI20+标准封装 CTS95UALTECHCORP20+标准封装 CZ4336344375OTHER20+标准封装 CZ4336501375OTHER20+标准封装 C1172266375OTHER20+标准封装 C2201202737
2021-6-5CP301LSN28T1G原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2019-7-27
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99