Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al -

Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al

Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al

PNP - General Purpose Transistor Die

The CP591X-2N2907A is a silicon PNP transistor designed for general purpose applications. MECHANICAL SPECIFICATIONS: Die Size 19.3 x 19.3 MILS Die Thickness 5.9 MILS Base Bonding Pad Size 3.5 x 4.3 MILS Emitter Bonding Pad Size 3.5

P-Channel JFET Die

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PNP - High Voltage Transistor Die

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Small Signal Transistor PNP - Amp/Switch Transistor Chip

Small Signal Transistor PNP - Amp/Switch Transistor Chip

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Chip Form: Amplifier/Switch Transistor

PNP - High Voltage Transistor Die

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P-Channel JFET Die

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Small Signal Transistor PNP - Amp/Switch Transistor Chip

PNP - General Purpose Transistor Die 0.6 Amp, 60 Volt

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PNP - High Voltage Transistor Die

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P-Channel JFET Die

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封装/外壳：模具 包装：散装 描述：TRANS PNP 60V 0.6A DIE 1=400 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：模具 包装：散装 描述：TRANS PNP 60V 0.6A DIE 1=20PCS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems.

NPN 7 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range

Addressable peripheral drivers

DESCRIPTION The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The device has eight Darlington power outputs, each capable of 250mA load current. The outputs are turned on or off by respectively loading a logic high

Addressable peripheral drivers

DESCRIPTION The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The device has eight Darlington power outputs, each capable of 250mA load current. The outputs are turned on or off by respectively loading a logic high

PNP BISS transistor

DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo