Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip

PROCESS DETAILS Die Size 22 x 17 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 14 x 9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip

Chip Form: N-Chan Enhancement Mode MOSFET

N-Channel MOSFET Die Enhancement-Mode

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(22.2 mm) Conductive Plastic Potentiometer, Bushing Mount Type

FEATURES • 7/8 diameter single turn • Compact size, advanced design technology • Offer a cost effective solution to your potentiometer requirements • Suitable model for all industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

7/8 diameter single turn

FEATURES • 7/8 diameter single turn • Compact size, advanced design technology • Offer a cost effective solution to your potentiometer requirements • Suitable model for all industrial applications • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

5x7mm Low Cost Surface Mount VCXO

♦ Frequency Stability to ±20 PPM ♦ +3.3Vdc or +5.0Vdc Operation ♦ HCMOS Output ♦ Operating Temperature to –40°C to +85°C ♦ Output Enable Standard ♦ Tape & Reel Packaging ♦ Pb Free

3M??Power Clamp Branch Connector

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Silver Oxide Batteries

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