Small Signal Transistors NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area 7.9 x 9.5 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalizatio

Small Signal Transistors NPN - High Current Transistor Chip

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Chip Form: High Current Transistor

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