Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.65 x 21.65 MILS Die Thickness 9.0 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area 5.9 x 13.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip

N- Channel Enhancement-Mode Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.6 x 21.6 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area 5.9 x 13.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip

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Chip Form: N-Chan Enhancement Mode MOSFET

P-Channel JFET Die

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PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

N- Channel Enhancement-Mode Transistor Chip

Socket terminal strip Screw connection

The socket terminal strip 324 is available in 11,5 mm pitch with 1- to 12-pole design and can be easily stripped to the desired number of poles. One fixing hole is located between every two poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the

PGA ZIF Test & Burn-in Socket for Any Footprint on Std 8x8 to 21x21 Grid

FEATURES • Strong Metal Cam Activates Normally-closed Contacts, Preventing Dependency on Plastic for Contact Force • Handle mounted on Right- or Left-hand Side • Any Footprint Accepted on Standard 13x13 to 21x21 Grid GENERAL SPECIFICATIONS • SOCKET BODY: black UL 94V-0 Polyphenylene Sulfid

T-1 Subminiature Lamps

T-1¼ Subminiature Lamps

Q-G짰 CONNECTOR-ADAPTERS

Q-G® CONNECTOR-ADAPTERS

320 Series True-rms Clamp Meters

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