Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip

Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip PROCESS DETAILS Die Size 105 x 105 MILS Die Thickness 8.5 MILS Base Bonding Pad Area 32 x 19 MILS Emitter Bonding Pad Area 28 x 22 MILS Top Side Metalization Al

包装：散装 描述：55A0142-20-MST4CS2275 电缆，电线 多芯导线

Square Type

Square Type □ 3.9 mm × 1.75 mm Series

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacit

SURFACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

Features • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX,LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capa