Power Transistor NPN - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 63 x 63 MILS Die Thickness 10 MILS Base Bonding Pad Area 9 x 12 MILS Emitter Bonding Pad Area 10 x 18 MILS Top Side Metalization Al - 16,000Å Back Side Metalization Au - 12,000Å

Power Transistor NPN - High Voltage Transistor Chip

双/四路电容性触摸检测芯片

双/四路电容性触摸检测芯片

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage fast rectification diode

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s

Silicon PIN Photodiode Array

Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2. Features • Three pho

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Square Type

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