Small Signal Transistor NPN - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.8 x 19.8 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 4.3 x 4.3 MILS Emitter Bonding Pad Area 4.3 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

CP2250-31阶增益可调3W、AB 类/D 类、立体声音频功放及耳机放大器

Chip Form: Amplifier/Switch Transistor

NPN - General Purpose Transistor Die 0.8 Amp, 40 Volt

文件：513.12 Kbytes Page：5 Pages

NPN - General Purpose Transistor Die 0.8 Amp, 40 Volt

文件：513.12 Kbytes Page：5 Pages

封装/外壳：模具 包装：散装 描述：TRANS NPN 40V 0.8A DIE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PGA ZIF Test & Burn-in Socket for Any Footprint on Std 8x8 to 21x21 Grid

FEATURES • Strong Metal Cam Activates Normally-closed Contacts, Preventing Dependency on Plastic for Contact Force • Handle mounted on Right- or Left-hand Side • Any Footprint Accepted on Standard 13x13 to 21x21 Grid GENERAL SPECIFICATIONS • SOCKET BODY: black UL 94V-0 Polyphenylene Sulfid

Silver Weather-Resistant Masking Tape

文件：14.69 Kbytes Page：2 Pages

SMK FEMALE TO SMK MALE STRAIGHT ADAPTER

文件：191.54 Kbytes Page：1 Pages

Fast-Acting Ceramic Body, Class J

文件：186.66 Kbytes Page：2 Pages

SCHOTTKY RECTIFIER

文件：44.17 Kbytes Page：4 Pages